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| NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES * * * * HIGH COLLECTOR CURRENT: 250 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz HIGH IP3: 37 dBm TYP at 1 GHz NE461M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.50.1 1.60.2 1.50.1 DESCRIPTION The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications. 0.8 MIN 0.42 0.06 E B E 0.42 0.06 1.5 3.0 0.45 0.06 3.950.26 C 2.450.1 0.250.02 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE2 |S21E|2 NF1 NF2 IM2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 20 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 DC Current Gain at VCE = 10 V, IC = 50 mA Insertion Power Gain at VCE = 10 V, IC = 50 mA, f = 1 GHz Noise Figure 1 at VCE = 10 V, IC = 50 mA, f = 500 MHz3 Noise Figure 2 at VCE = 10 V, IC = 50 mA, f = 1 2nd Order Intermodulation Distortion VCE = 10 V, IC = 50 mA, Rs = RL = 75 Pin = 105 dB V/75 , f1 = 190 MHz f2 = 90 MHz, f = f1 - f2 3rd Order Intermodulation Distortion VCE = 10 V, IC = 50 mA, Rs = RL = 75 Pin = 105 dB V/75 , f1 = 190 MHz f2 = 200 MHz, f = 2 x f1 - f2 GHz3 dB dB dB dB UNITS A A 40 7.0 MIN NE461M02 2SC5337 M02 TYP 0.01 0.03 120 8.3 1.5 2.0 59.0 3.5 3.5 MAX 5.0 5.0 200 IM3 dB 82.0 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Rs = RL = 50 , tuned. California Eastern Laboratories NE461M02 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA W C C RATINGS 30 15 3.0 250 2.0 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE461M02-T1 QUANTITY 1000 PACKAGING Tape & Reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramic substrate (copper plating). TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 300 DC CURRENT GAIN VS. COLLECTOR CURRENT VCE 10 V 100 IB=0.6 mA 0.5 mA Collector Current, IC (mA) 80 0.4 mA DC Current Gain, hFE 100 60 0.3 mA 40 0.2 mA 20 0.1 mA 50 10 0 10 20 0.1 1 10 100 1000 Collector to Emitter Voltage, VCE (V) Collector Current, Ic (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5.0 f = 1.0 MHz Gain Bandwidth Product, fT (GHz) Feedback Capacitance, CrE (pF) VCE = 10 V f = 1 GHz 5 3 2 3.0 2.0 1.0 1 0.5 0.5 0.3 0.3 10 30 50 70 100 1 3 5 10 20 30 Collector Current, Ic (mA) Collector to Base Voltage, VCB (V) NE461M02 TYPICAL PERFORMANCE CURVES (TA = 25C) INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1 GHz 10 INSERTION POWER GAIN and MAXIMUM AVAILABLE GAIN vs. FREQUENCY |S21E| 2 Insertion Power Gain, IS21E|2 (dB) Insertion Power Gain, IS21E|2 (dB) Maximum Available Gain, MAG (dB) MAG 20 5 10 VCE = 10 V IC = 50 MA 0 0.2 0.4 0.6 0.8 1.0 1.4 2.0 0 10 30 50 70 100 Collector Current, Ic (mA) Frequency, f (GHz) NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1 GHz 6 3rd Order Intermodulation Distortion, IM3 (dBc) 2nd Order Intermodulation Distortion, IM2+ (dBc) 2nd Order Intermodulation Distortion,IM2- (dBc) 3RD ORDER INTERMODULATION DISTORTION 2ND ORDER INTERMODULATION DISTORTION (+) & 2ND ORDER INTERMODULATION DISTORTION (-) vs. COLLECTOR CURRENT 80 IM3 70 Noise Figure, NF (dB) 5 4 60 IM2+ IM250 IM3: Vo = 110 dB V/75 2 tone each f = 2 x 190 MHz - 200 Mhz IM2+: Vo = 105 dB V/75 2 tone each f = 90 MHz + 100 MHz IM2-: Vo 105 dB V/75 2 tone each f = 190 MHz - 90 MHz 50 100 300 3 2 1 40 VCE=10 V 0 5 10 20 50 100 30 10 Collector Current, Ic (mA) Collector Current, IC (mA) NE461M02 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 90 120 60 150 j10 S22 3 GHz S11 3 GHz 0 S21 0.1 GHz S21 3 GHz S12 0.1 GHz S12 3 GHz 30 0 180 0 -j10 S11 0.1 GHz -j25 -j50 S22 0.1 GHz -j100 Coordinates in Ohms Frequency in GHz VCE = 10 V, IC = 50 mA -150 -30 -120 -90 -60 NE461M02 VCE = 5 V, IC = 50 mA FREQUENCY GHz 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.603 0.615 0.618 0.616 0.612 0.607 0.602 0.596 0.588 0.581 0.572 0.563 0.553 0.544 0.535 0.527 S11 ANG -142.0 -165.0 178.5 168.9 161.2 154.4 148.0 142.0 136.2 130.6 125.0 119.6 114.0 108.4 102.7 97.0 MAG 22.351 11.847 6.043 4.072 3.089 2.506 2.123 1.858 1.661 1.514 1.397 1.307 1.232 1.169 1.118 1.074 S21 ANG 109.2 95.2 83.2 75.1 68.2 61.8 55.8 50.2 44.9 39.8 35.1 30.3 25.9 21.6 17.5 13.4 MAG 0.031 0.042 0.066 0.092 0.119 0.146 0.172 0.198 0.224 0.250 0.275 0.300 0.325 0.349 0.373 0.396 S12 ANG 47.3 52.4 60.8 63.4 63.4 62.2 60.4 58.2 55.9 53.3 50.6 47.8 44.9 41.9 38.8 35.6 MAG 0.456 0.345 0.309 0.307 0.310 0.315 0.321 0.328 0.335 0.341 0.347 0.353 0.359 0.363 0.369 0.373 S22 ANG -100.7 -129.0 -147.0 -152.1 -153.5 -153.6 -153.3 -152.8 -152.2 -151.7 -151.5 -151.4 -151.4 -151.8 -152.4 -153.3 0.50 0.77 0.97 1.04 1.06 1.07 1.07 1.06 1.06 1.05 1.04 1.03 1.02 1.01 1.00 1.00 K MAG1 (dB) 28.6 24.5 19.6 15.3 12.7 10.8 9.3 8.2 7.3 6.5 5.9 5.4 5.0 4.6 4.5 4.3 VCE = 10 V, IC = 50 mA FREQUENCY GHz 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.599 0.602 0.601 0.599 0.596 0.591 0.586 0.581 0.573 0.566 0.557 0.549 0.540 0.531 0.523 0.515 S11 ANG -137.2 -162.2 179.8 169.8 161.9 155.0 148.5 142.4 136.6 131.0 125.5 120.1 114.5 108.9 103.2 97.5 MAG 23.210 12.353 6.307 4.248 3.220 2.609 2.208 1.929 1.722 1.568 1.444 1.349 1.269 1.202 1.148 1.101 S21 ANG 109.9 95.7 83.5 75.4 68.4 62.1 56.1 50.5 45.2 40.1 35.3 30.5 26.1 21.8 17.6 13.5 MAG 0.031 0.042 0.066 0.091 0.117 0.144 0.169 0.195 0.220 0.245 0.270 0.295 0.319 0.342 0.366 0.388 S12 ANG 48.0 51.4 60.0 62.8 63.0 61.9 60.2 58.1 55.8 53.3 50.7 48.0 45.1 42.2 39.1 36.0 MAG 0.455 0.335 0.295 0.292 0.295 0.301 0.309 0.317 0.325 0.333 0.340 0.347 0.354 0.360 0.366 0.372 S22 ANG -97.0 -125.3 -143.9 -149.2 -150.6 -150.7 -150.3 -149.7 -149.1 -148.6 -148.3 -148.2 -148.2 -148.6 -149.2 -150.1 0.48 0.75 0.97 1.03 1.06 1.07 1.07 1.06 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 K MAG1 (dB) 28.7 24.7 19.8 15.6 12.9 11.0 9.6 8.4 7.5 6.7 6.1 5.6 5.2 4.8 4.8 4.5 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE461M02 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 90 120 S21 0.1 GHz 60 150 j10 S22 3 GHz 0 S11 3 GHz 0 30 180 0 -j10 S11 0.1 GHz S22 0.1 GHz -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz VCE = 12 V, IC = 100 mA -150 S21 3 GHz S12 0.1 GHz S12 3 GHz -60 -90 -30 -120 NE461M02 VCE = 10 V, IC = 100 mA FREQUENCY GHz 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.596 0.601 0.601 0.600 0.597 0.593 0.588 0.581 0.574 0.565 0.556 0.547 0.535 0.524 0.515 0.505 S11 ANG -144.8 -166.5 177.5 168.1 160.4 153.6 147.2 141.2 135.3 129.6 124.1 118.7 113.0 107.5 101.8 96.1 MAG 23.959 12.575 6.386 4.296 3.258 2.640 2.236 1.953 1.747 1.590 1.468 1.371 1.292 1.225 1.170 1.122 S21 ANG 106.7 93.9 82.7 75.0 68.3 62.1 56.3 50.8 45.6 40.6 35.8 31.1 26.6 22.3 18.1 14.1 MAG 0.029 0.040 0.066 0.093 0.120 0.147 0.174 0.201 0.227 0.252 0.277 0.302 0.325 0.348 0.371 0.393 S12 ANG 48.5 55.6 63.6 65.3 64.7 63.1 60.9 58.5 55.9 53.1 50.3 47.4 44.3 41.3 38.2 35.1 MAG 0.422 0.334 0.308 0.306 0.309 0.313 0.318 0.324 0.330 0.335 0.341 0.346 0.351 0.355 0.359 0.363 S22 ANG -108.4 -135.7 -152.0 -156.5 -157.7 -157.8 -157.4 -156.6 -155.7 -154.9 -154.2 -153.5 -153.0 -152.8 -152.8 -153.0 0.56 0.82 0.99 1.04 1.06 1.06 1.06 1.06 1.05 1.05 1.04 1.03 1.02 1.02 1.01 1.00 K MAG1 (dB) 29.2 25.0 19.9 15.4 12.9 11.0 9.5 8.4 7.5 6.7 6.1 5.5 5.1 4.7 4.4 4.2 VCE = 12 V, IC = 100 mA FREQUENCY GHz 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.596 0.598 0.597 0.595 0.592 0.588 0.583 0.576 0.568 0.560 0.550 0.540 0.530 0.520 0.510 0.502 S11 ANG -143.1 -165.5 178.0 168.4 160.6 153.7 147.3 141.3 135.5 129.9 124.4 119.0 113.5 107.9 102.3 96.7 MAG 24.061 12.640 6.417 4.313 3.268 2.647 2.241 1.957 1.750 1.593 1.471 1.373 1.294 1.228 1.172 1.123 S21 ANG 106.9 94.0 82.7 74.9 68.2 62.0 56.2 50.7 45.5 40.5 35.6 31.0 26.4 22.1 17.9 13.8 MAG 0.029 0.040 0.065 0.093 0.120 0.147 0.173 0.199 0.225 0.250 0.275 0.300 0.323 0.346 0.369 0.391 S12 ANG 48.3 55.1 63.0 64.8 64.3 62.8 60.7 58.3 55.8 53.1 50.2 47.4 44.3 41.3 38.2 35.0 MAG 0.416 0.328 0.301 0.299 0.302 0.306 0.312 0.318 0.324 0.330 0.336 0.342 0.347 0.353 0.357 0.362 S22 ANG -107.7 -135.1 -151.6 -156.2 -157.4 -157.4 -156.9 -156.1 -155.2 -154.3 -153.5 -152.8 -152.3 -152.0 -151.9 -152.2 K 0.56 0.82 0.99 1.04 1.06 1.07 1.07 1.07 1.06 1.05 1.04 1.03 1.03 1.02 1.01 1.01 MAG1 (dB) 29.3 25.0 19.9 15.4 12.8 11.0 9.5 8.3 7.4 6.6 6.0 5.5 5.0 4.6 4.4 4.1 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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