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| 6MBP25RA120 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series packages * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 1200V / 25A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. 0 0 200 0 0 0 0 -40 -20 Max. 900 1000 800 1200 25 50 25 198 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 V V V V A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms DC Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF Condtion VCE=1200V input terminal open Ic=25A -Ic=25A Min. - - - Typ. - - - Max. 1.0 2.6 3.0 Unit mA V V 6MBP25RA120 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM Condition fsw=0 to 15kHz Tc=-20 to 100C *7 fsw=0 to 15kHz Tc=-20 to 100C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature surface of IGBT chips Tj=125C Tj=25C IGBT-IPM Fig.2 Tj=25C Fig.3 Min. Typ. Max. 3 18 10 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 110 125 20 150 20 38 10 11.0 12.5 0.2 1.5 2 12 1425 1500 1575 Unit mA mA V V V C C C C A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=25A, VDC=600V IF=25A, VDC=600V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.63 1.33 Unit C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 6MBP25RA120 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g 6MBP25RA120 Characteristics (Representative) Control Circuit IGBT-IPM Power supply current vs. Switching frequency Tj=100C 30 2.5 In pu t sig n al thresho ld voltag e vs. Po wer su p p ly vo lta ge T j=2 5* * T j=1 25 * * P owe r su p ply cu rre nt : Ic c (m A ) 25 V cc= 15V V cc= 13V In pu t s ign a l th res ho ld v o lta ge P -sid e N -sid e V cc= 17V : V in (on ),V in(o ff) (V ) 2 } V in(o ff) 1.5 } V in(o n) 20 15 1 10 V cc= 17V V cc= 15V 5 V cc= 13V 0.5 0 0 5 10 15 20 25 0 12 13 14 15 16 17 18 S witchin g freq ue nc y : fsw (kH z) P ow e r s up p ly v oltag e : V c c (V ) U n d e r v o lta g e v s . J u n c tio n te m p e ra tu re 14 U n d er vo ltag e hys teris is vs . Jnc tion tem p e rature 1 12 U n d e r vo lta g e h yste risis : V H (V ) 0.8 U n d e r v o lta ge : V U V T (V ) 10 0.6 8 6 0.4 4 0.2 2 0 20 40 60 80 10 0 12 0 14 0 0 20 40 60 80 10 0 12 0 14 0 Junction temperature : Tj (C) Junction temperature : Tj (C) A larm h old tim e vs. Po we r sup ply voltag e 3 200 O ver he ating charac teris tics T c O H ,T jO H ,T c H ,T jH v s. V cc O v er he ating protection : T cO H ,T jO H (C ) O H hysterisis : T cH ,T jH (C ) TjO H 150 TcO H 100 2.5 Tj=125C A larm h o ld tim e : tA L M (m S e c ) 2 Tj=25C 1.5 1 50 TcH,TjH 0.5 0 12 13 14 15 16 17 18 0 12 13 14 15 16 17 18 P ow e r s up p ly v oltag e : V cc (V ) P ow e r s upply vo ltage : V cc (V) 6MBP25RA120 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 40 Vcc=17V 35 35 C o llec to r cu rren t vs . C o lle cto r-E m itte r vo lta g e Tj= 1 25 C 40 V cc= 17V Vcc=15V V cc= 15V Collector Current : Ic (A) C ollec to r C u rre nt : Ic (A ) Vcc=13V 30 25 20 15 10 5 0 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 V cc= 13V 0 0.5 1 1.5 2 2.5 3 3 Collector-Emitter voltage : Vce (V) C olle c to r-Em itte r vo lta g e : V c e (V) S witc h in g tim e vs . C ollector c u rren t E d c =6 00 V ,V cc= 15 V ,Tj= 25 C 1 000 0 1 000 0 S w itc h in g tim e vs . C o lle c to r c u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,Tj= 1 2 5 C S w itc hin g tim e : ton ,to ff,tf (n S e c ) S w itc hin g tim e : ton ,to ff,tf (n S e c) to ff to n 1000 to ff 1000 to n tf 10 0 tf 100 10 0 5 10 15 20 25 30 35 40 10 0 5 10 15 20 25 30 35 40 C o lle c tor c u rre nt : Ic (A ) C o lle c tor c u rre nt : Ic (A ) F o rw a rd cu rre n t vs. F orw a rd vo lta g e 40 35 12 5C 1 00 0 R everse reco very ch aracteristics trr,Irr vs. IF R e ve rse rec ove ry c u rre n t : Irr(A ) R eve rse re c o ve ry tim e : trr(n S e c) 25C trr1 2 5 C trr2 5C 100 F orw a rd C u rre n t : If (A ) 30 25 20 15 10 5 0 Irr12 5 C 10 Irr2 5C 0 0.5 1 1.5 2 2.5 3 1 0 5 10 15 20 25 30 35 40 Fo rw a rd vo lta g e : V f (V ) F o rw ard c u rre nt : IF (A ) 6MBP25RA120 IGBT-IPM Tra n s ie n t th e rm a l re sista n c e 10 Reversed biased safe operating area Vcc=15V,Tj < 125C = 350 T h erm a l re s ista n ce : R th (j-c ) (C /W ) 300 Collector current : Ic (A) FW D 1 IG B T 250 200 SCSOA (non-repetitive pulse) 150 0.1 100 50 RBSOA (Repetitive pulse) 0 .0 1 0.00 1 0 0 .0 1 0.1 1 0 200 400 600 800 1000 1200 1400 P u ls e w idth :P w (s e c ) Collector-Emitter voltage : Vce (V) P ow er d era tin g fo r IG B T (p er device) 2 50 C ollecter P ow er D is s ipa tion : P c (W ) C o lle cte r P o w er D iss ip ation : P c (W ) 10 0 P ow er dera ting for F W D (pe r d evice) 2 00 80 1 50 60 1 00 40 50 20 0 0 20 40 60 80 1 00 1 20 1 40 1 60 C a se Tem peratu re : T c (C ) S witchin g Lo s s vs. C olle c to r C u rrent E dc =600 V ,V cc= 15V ,Tj= 25 C 12 0 0 20 40 60 80 10 0 12 0 14 0 16 0 C a se T e m p era ture : T c (C ) S w itch in g L o s s vs . C o lle c to r C u rre nt E dc =6 0 0 V ,V cc =1 5 V ,Tj= 1 2 5 C 12 S w itc h in g lo s s : E o n, E o ff,E rr (m J/c y c le) S w itch in g lo s s : E o n,Eo ff,E rr (m J/cy c le) 10 10 Eo n 8 Eo n 6 8 6 Eo ff 4 4 Eo ff 2 E rr 0 0 5 10 15 20 25 30 35 40 2 E rr 0 0 5 10 15 20 25 30 35 40 C o lle ct or c u rre nt : Ic (A ) C o lle ctor cu rre nt : Ic (A ) 6MBP25RA120 IGBT-IPM O ver curre nt p ro te ction v s. J u nctio n te m p eratu re Vcc =1 5 V 100 O ver current protection level : Ioc(A) 80 60 40 20 0 0 20 40 60 80 100 120 Junction tem perature : Tj(C) 140 |
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