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| BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain 3 D Low noise D High reverse attenuation 2 94 9308 13623 1 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol -VCBO -VCEO -VEBO -IC Ptot Tj Tstg Value 20 20 3 50 300 150 -55 to +150 Unit V V V mA mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 300 Unit K/W Document Number 85006 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BF979 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions -VCE = 20 V, VBE = 0 -VCB = 15 V, IE = 0 -VEB = 3 V, IC = 0 -IC = 1 mA, IB = 0 -VCE = 10 V, -IC = 10 mA Symbol Min Typ Max Unit -ICES 100 mA -ICBO 100 nA -IEBO 10 mA -V(BR)CEO 20 V hFE 20 50 90 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Transition frequency Collector-base capacitance Noise figure Power gain Collector current for Gpbmax Test Conditions -VCE = 10 V, -IC = 10 mA, f = 300 MHz -VCE = 10 V, -IC = 30 mA, f = 300 MHz -VCB = 10 V, f = 1 MHz -VCE = 10 V, -IC = 10 mA, ZS = 50 W, f = 800 MHz -VCE = 10 V, -IC = 10 mA, ZS = 50 W, ZL = 500 W, f = 800 MHz -VCE = 10 V, ZL = 500 W, f = 800 MHz Symbol fT fT Ccb F Gpb -IC Min Typ 1750 1300 0.6 3.4 16 10 Max Unit MHz MHz pF dB dB mA 4.2 www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 85006 Rev. 3, 20-Jan-99 BF979 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 350 300 250 200 150 100 50 0 0 12845 C cb - Collector Base Capacitance ( pF ) 20 40 60 80 100 120 140 160 12876 400 P tot - Total Power Dissipation ( mW ) 1.0 0.8 0.6 0.4 0.2 0 0 4 8 12 16 20 -VCB - Collector Base Voltage ( V ) Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 2100 f T - Transition Frequency ( MHz ) 1800 1500 1200 900 600 300 0 0 12848 Figure 3. Collector Base Capacitance vs. Collector Base Voltage -VCB=10V f=300MHz 5 10 15 20 25 30 35 -IC - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Document Number 85006 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BF979 Vishay Telefunken Dimensions of BF979 in mm 96 12243 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 85006 Rev. 3, 20-Jan-99 BF979 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85006 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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