 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPD13N03LA IPS13N03LA IPF13N03LA IPU13N03LA OptiMOS(R)2 Power-Transistor Features * Ideal for high-frequency dc/dc converters * Qualified according to JEDEC1) for target applications * N-channel, logic level * Excellent gate charge x R DS(on) product (FOM) * Superior thermal resistance * 175 C operating temperature Product Summary V DS R DS(on),max ID 25 12.8 30 V m A Type IPD13N03LA IPF13N03LA IPS13N03LA IPU13N03LA Package Ordering Code Marking P-TO252-3-11 Q67042-S4159 13N03LA P-TO252-3-23 Q67042-S4195 13N03LA P-TO251-3-11 Q67042-S4248 13N03LA P-TO251-3-21 Q67042-S4160 13N03LA Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C T C=25 C3) I D=24 A, R GS=25 I D=30 A, V DS=20 V, di /dt =200 A/s, T j,max=175 C Value 30 30 210 60 6 20 46 -55 ... 175 55/175/56 mJ kV/s V W C Unit A Rev. 1.7 page 1 2004-05-24 IPD13N03LA IPS13N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA Values typ. IPF13N03LA IPU13N03LA Unit max. minimal footprint 6 cm2 cooling area5) 3.2 75 50 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 A V DS=25 V, V GS=0 V, T j=25 C V DS=25 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=20 A V GS=10 V, I D=30 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 A V 18 10 10 17.5 10.7 0.9 36 100 100 21.9 12.8 S nA m 1) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=3.2 K/W the chip is able to carry 47 A. See figure 3 T j,max=150 C and duty cycle D <0.25 for V GS<-5 V 2) 3) 4) 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.7 page 2 2004-05-24 IPD13N03LA IPS13N03LA Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.95 Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=15 A, V GS=0 to 5 V 2.7 1.3 1.8 3.3 6.3 3.4 5.5 6.6 C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=15 A, R G=2.7 784 303 41 5.4 4.6 15 2.6 Values typ. IPF13N03LA IPU13N03LA Unit max. V GS=0 V, V DS=15 V, f =1 MHz 1043 402 62 8.0 6.9 23 3.9 pF ns 3.6 1.7 2.7 4.7 8.3 7.3 8.7 nC V nC 30 210 1.2 A V Reverse recovery charge Q rr - - 10 nC 6) See figure 16 for gate charge parameter definition Rev. 1.7 page 3 2004-05-24 IPD13N03LA IPS13N03LA 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPF13N03LA IPU13N03LA 50 40 40 30 30 P tot [W] I D [A] 20 10 0 0 50 100 150 200 20 10 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 limited by on-state resistance 1 s 0.5 100 10 s 1 0.2 Z thJC [K/W] I D [A] 0.1 0.05 0.02 0.01 100 s DC 10 1 ms 0.1 10 ms single pulse 1 0.1 1 10 100 0.01 0 0 0 0 0 0 1 V DS [V] 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.7 page 4 2004-05-24 IPD13N03LA IPS13N03LA 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 60 10 V IPF13N03LA IPU13N03LA 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 50 3V 4.5 V 3.2 V 3.5 V 3.8 V 4.1 V 50 40 40 4.1 V R DS(on) [m] 30 4.5 V I D [A] 30 3.8 V 20 20 3.5 V 10 10 3.2 V 3V 2.8 V 10 V 0 0 1 2 3 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 8 Typ. forward transconductance g fs=f(I D); T j=25 C 50 40 40 30 g fs [S] 20 20 10 175 C 25 C I D [A] 0 0 1 2 3 4 5 0 0 10 20 30 40 50 60 V GS [V] I D [A] Rev. 1.7 page 5 2004-05-24 IPD13N03LA IPS13N03LA 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 24 2.5 IPF13N03LA IPU13N03LA 20 2 16 200 A 98 % R DS(on) [m] V GS(th) [V] 1.5 20 A 12 typ 1 8 4 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. Capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 1000 25 C 103 1000 Ciss 100 175 C, 98% 175 C 25 C, 98% C [pF] 102 I F [A] 10 1 20 25 30 0.0 Coss 100 Crss 101 10 0 5 10 15 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 1.7 page 6 2004-05-24 IPD13N03LA IPS13N03LA 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 IPF13N03LA IPU13N03LA 14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD 12 15 V 10 150 C 100 C 25 C 5V 20 V 8 10 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 1 0 0 2 4 6 8 10 12 14 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 29 V GS 28 27 26 Qg V BR(DSS) [V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 V g s(th) Q g(th) Q gs Q sw Q gd Q g ate T j [C] Rev. 1.7 page 7 2004-05-24 IPD13N03LA IPS13N03LA Package Outline P-TO252-3-11: Outline IPF13N03LA IPU13N03LA Footprint: Packaging: Dimensions in mm Rev. 1.7 page 8 2004-05-24 IPD13N03LA IPS13N03LA Package Outline P-TO252-3-23: Outline IPF13N03LA IPU13N03LA Footprint: Dimensions in inch [mm] Rev. 1.7 page 9 2004-05-24 IPD13N03LA IPS13N03LA Package Outline P-TO251-3-11: Outline IPF13N03LA IPU13N03LA P-TO251-3-21: Outline Dimensions in inch [mm] Rev. 1.7 page 10 2004-05-24 IPD13N03LA IPS13N03LA Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. IPF13N03LA IPU13N03LA Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.7 page 11 2004-05-24 |
Price & Availability of IPS13N03LA
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |