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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Isolated mounting tab
PBYR10100X series
SYMBOL
QUICK REFERENCE DATA VR = 100 V
k 1
a 2
IF(AV) = 10 A VF 0.74 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR10100 series is supplied in the conventional leaded SOD113 package.
PINNING
PIN 1 2 case DESCRIPTION cathode anode isolated
SOD113 (SOT186A)
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS MIN. Ths 115 C square wave; = 0.5; Ths 114 C square wave; = 0.5; Ths 114 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MAX. 100 100 100 10 20 135 150 1 150 150 V V V A A A A A C C UNIT
IRRM Tj Tstg
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol Cisol PARAMETER R.M.S. isolation voltage from both terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Capacitance from both terminals f = 1 MHz to external heatsink
-
10
-
pF
November 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heat sink Thermal resistance junction to ambient CONDITIONS
PBYR10100X series
MIN. -
TYP. MAX. UNIT 55 4 K/W K/W
in free air
-
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 10 A; Tj = 125C IF = 20 A; Tj = 125C IF = 20 A VR = VRWM VR = VRWM; Tj = 125C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.64 0.79 0.94 5 5 420 0.74 0.90 1.00 150 15 V V V A mA pF
November 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR10100X series
Forward dissipation, PF (W) 10 9 8 7 6 5 4 3 2 1 0 0 1 4 2.8 2.2
Ths(max) (C) a = 1.57 1.9 110 118 126 134 142 150 9
100
IR / mA
PBYR10100
10 150 C 125 C 1 100 C 0.1 0.01 75 C Tj = 50 C
2 3 4 5 6 7 Average forward current, IF(AV) (A)
8
0
50 VR/ V
100
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
Cd/ pF 10000
Forward dissipation, PF (W) 12 D = 1.0 10 8 0.2 6 4 2
T
PBYR20100CT
Ths(max) (C) 102 110 118
0.5
1000
0.1
tp D = tp/T
126 134 142 150
100
0 0 2 4 6 8 10 12 Average forward current, IF(AV) (A)
14
10 1 10 VR/ V 100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
IF / A 50 Tj = 25 C 40 Tj = 125 C Typ 30 Max
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
20
0.01
P D tp D= tp T t
10
T
0 0 0.5 1 VF / V 1.5 2
0.001 1us
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR10100
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
November 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PBYR10100X series
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
3,0 max not tinned 3,0
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
November 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR10100X series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1999
5
Rev 1.000

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