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January 2003
AO6407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -5 A RDS(ON) < 45m (VGS = -4.5V) RDS(ON) < 60m (VGS = -2.5V) RDS(ON) < 85m (VGS = -1.8V)
D TSOP6 Top View D D G 16 25 34 D D S G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 8 -5.5 -4.5 -30 2 1.44 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 47.5 74 37
Max 62.5 110 50
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6407
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-5A Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VDS=-5V, ID=-5A -0.3 -25 34 48 46 7 61 14 -0.78 45 60 60 85 -1 -2.2 -0.55 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1180 176 142 15 13 1.2 3.6 13.2 21 93 46 43 21
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, ID=-5A
VGS=-4.5V, VDS=-10V, RL=2.0, RGEN=3
IF=-5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO6407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance VGS=-1.8V RDS(ON) (m) 60 VGS=-2.5V 40 VGS=-4.5V 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C 1.0E-04 ID=-5A -IS (A) 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 25C 1.6 ID=-5A, VGS=-4.5V 1.4 ID=-3A, VGS=-1.8V ID=-4A, VGS=-2.5V VGS=-1.5V -8V -4.5V -3.0V -2.5V -ID (A) -2.0V 6 -ID(A) 4 2 0 0 0.5 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics 10 VDS=-5V 8
125C 25C
1.2
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO6407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 3 6 9 12 15 -Qg (nC) Figure 7: Gate-Charge Characteristics 2000 VDS=-10V ID=-5A Capacitance (pF) 1600 Ciss 1200 800 Coss 400 0 0 Crss 5 10 15 20
-VDS (Volts) Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150C TA=25C RDS(ON) limited 0.1s
40 10s Power (W) 100s 1ms 10ms 30
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
20
1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
A A1 A2 b c D E E1 e e1 L 1
MIN 1.00 0.00 1.00 0.35 0.10 2.70 2.60 1.60
0.37 1
NOM --- --- 1.10 0.40 0.13 2.90 2.80 1.80 0.95 BSC 1.90 BSC --- 5
MAX 1.25 0.10 1.15 0.50 0.20 3.10 3.00 2.00 --- 8
PACKAGE MARKING DESCRIPTION
SEATING PLANE
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
GAUGE PLANE
RECOMMENDED LAND PATTERN
TSOP-6 PART NO. CODE
PART NO.
CODE D7
PNDLN
AO6407
NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Tape and Reel Data
TSOP-6 Reel
TSOP-6 Tape
Leader / Trailer & Orientation

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