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| AP2605Y Advanced Power Electronics Corp. Fast Switching Characteristic Lower Gate Charge Small Footprint & Low Profile Package D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET S BVDSS RDS(ON) ID G D D -30V 80m - 4A SOT-26 Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 20 -4 -3.3 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200202041 AP2605Y Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.02 6 5.5 1 2.6 7 6 18 4 400 90 30 Max. Units 80 120 -3 -1 -25 100 8.8 640 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-4A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.6A, VGS=0V IS=-4A, VGS=0V, dI/dt=100A/s Min. - Typ. 21 14 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad. AP2605Y 45 40 40 T A =25 o C - 10 V -7.0V -ID , Drain Current (A) 35 T A = 150 o C 35 - 10 V -7.0V 30 -ID , Drain Current (A) 30 25 25 -5.0V -4.5V 20 20 -5.0V -4.5V 15 15 10 10 5 V G =-3.0V 0 1 2 3 4 5 6 7 8 9 5 V G =-3.0V 0 1 2 3 4 5 6 7 8 0 0 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 1.6 95 I D = -3.0 I D =-4.2A A T A =25 o T A =25 o C C Normalized RDS(ON) 1.4 I D =-4.0A V G =10V RDS(ON) (m ) 85 1.2 75 1.0 65 0.8 55 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 4 3 2 2 T j =150 o C T j =25 o C -VGS(th) (V) 1.4 -IS(A) 1.5 1 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2605Y f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 V DS =-24V I D =-4A 8 C iss 6 C (pF) 100 C oss 4 C rss 2 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 0.1 1ms -ID (A) 1 0.1 0.05 PDM 0.01 10ms 100ms 0.1 t T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 156/W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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