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| FDZ7064N January 2003 FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features * 13.5 A, 30 V. RDS(ON) = 8.0 m @ VGS = 4.5 V RDS(ON) = 7.0 m @ VGS = 10 V * Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * 3.5 x 4 mm2 Footprint * High power and current handling capability. Applications * DC/DC converters * Solenoid drive Pin 1 D D D D D D S S S G D S S S S D S S S S D S S S S D D D D D D F7064 G Pin 1 S Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 12 13.5 60 2.2 -55 to +150 Units V V A W C Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 C/W Package Marking and Ordering Information Device Marking 7064N Device FDZ7064N Reel Size 13" Tape width 12mm Quantity 3000 2003 Fairchild Semiconductor Corporation FDZ7064N Rev. D2 (W) FDZ7064N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 30 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 21 1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, 0.8 1.2 -4.6 6.1 5.4 9.0 2.0 V mV/C ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 13.5 A ID = 14.5 A VGS = 10 V, VGS = 4.5 V, ID = 13.5A, TJ =125C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 13.5 A 8.0 7.0 13 m ID(on) gFS 60 92 A S Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 3843 522 209 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 9 71 18 20 18 114 32 43 ns ns ns ns nC nC nC VDS = 15 V, VGS = 4.5 V ID = 13.5 A, 31 8 7.4 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.8 A Voltage Diode Reverse Recovery Time IF = 13.5 A, diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 30 35 1.8 1.2 A V nS nC Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a) 56C/W when 2 mounted on a 1in pad of 2 oz copper b) 119C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ7064N Rev. D2(W) FDZ7064N Dimensional Outline and Pad Layout FDZ7064N Rev. D2(W) FDZ7064N Typical Characteristics 60 2 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0V 1.8 VGS = 2.5V 1.6 1.4 1.2 1 0.8 0 0.5 1 1.5 2 50 ID, DRAIN CURRENT (A) 40 30 20 4.5V 3.0V 3.5V 4.5V 6.0V 10V 2.0V 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 13.5A VGS = 10V 1.4 ID =6.8 A 0.018 1.2 0.014 TA = 125oC 0.01 1 TA = 25oC 0.006 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 175 0.002 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 40 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 TA = 125oC 30 25 C o -55oC 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7064N Rev. D2(W) FDZ7064N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.5A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V 5000 CISS 4000 f = 1MHz VGS = 0 V 3000 4 2000 COSS 1000 CRSS 2 0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1s 1 10s VGS = 10V SINGLE PULSE RJA = 119oC/W TA = 25oC 0.01 0.01 DC 1ms 10ms 100ms 100us 40 SINGLE PULSE RJA = 119C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 119 C/W P(pk) 0.1 0.1 0.05 t1 0.02 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.01 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7064N Rev. D2(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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