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GP1S25
GP1S25
s Features
1. Side lead ultra-compact transmission type 2. Conforming to solder reflow Pre-heat : 160 C, MAX. 120 sec Reflow : 200 C, MAX. 60 sec
Side Lead Type Ultra-compact Photointerrupter
s Outline Dimensions
(Unit : mm)
Top View
a
Circuit diagram: Top View
(
240 C, MAX. 10 sec
)
4 3 2 1
1 2 3 4
Anode Collector Emitter Cathode
3. Slit : 0.3 mm
(0.85)
2.5
a
0.6 1.0 1.6 1.25 3.4
4. Gap : 1.6 mm
a-a section (0.3) Slit width Gate position
s Applications
1. CD-ROM drives 2. FDDs
4.0 3.0
(C0.3) 0.15 + 0.2 0.1
(1)
5.2
Optical center
S4
6
0.8
0.4 g 0.87 g 0.8
g 0.87 (C0.3)
1 2 3 4
1234
* Tolerance : 0.2 mm * ( ) : Connector dimensions for reference * The dimensions indicated by g refer to those measured from the lead base. * Dimensions shown do not include burr. Burr's dimension : 0.15 MAX. Rest of gate : 0.3 MAX.
s Absolute Maximum Ratings
Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol IF VR P VCEO VECO IC PC P tot T opr T stg T sol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260
(Ta=25C) Unit mA V mW V V mA mW mW C C C
Input
Output
*1 Soldering time : For 3 seconds (hand soldering)
GP1S25
s Electro-optical Characteristics
Parameter Forward voltage Reverse current Dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC V CE(sat) tr tf Conditions IF = 20mA VR = 3V VCE = 20V VCE = 5V, IF = 5mA IF = 10mA, IC= 50 A VCE = 5V, IC = 100 A RL = 1 000 MIN. 50 TYP. 1.2 35 35 MAX. 1.4 10 100 300 0.4 100 100 (Ta=25 C) Unit V A nA A V s s
Input Output Transfer characteristics
Fig. 1 Forward Current vs. Ambient Temperature
60
Fig. 2 Power dissipation vs. Ambient Temperature
120
Total power dissipation
50
100
Power dissipation P (mW)
(mA)
Input side power dissipation and
Forward current I
F
40
80 output side collector power dissipation
30
60
20
40
10 0 - 25
20 0 - 25
0
25
50
75 85
100
0
25
50
75 85
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig. 3 Forward Current vs. Forward Voltage
500 200 Ta= 75C 50C 25C 0C - 25C
Fig. 4 Collector Current vs. Forward Current
VCE =5V Ta =25C
2.0
Forward current I F (mA)
Collector current I C (mA )
100 50 20 10 5 2 1 0 0.5 1 1.5 2
1.6
1.2
0.8
0.4
2.5
3
0 0
4
8
12
16
20
Forward voltage V F (V)
Forward current IF (mA )
GP1S25
Fig. 5 Collector Current vs. Collector-emitter Voltage
3.0
Fig. 6 Relative Collector Current vs. Ambient Temperature
120 110 100
IF=5mA VCE=5V
Collector current I C (mA )
Collector current I C (mA )
10
2.4
90 80 70 60 50 40 30 20 10 0 - 25
1.8
IF=50mA 40mA
1.2
30mA 20mA
0.6
10mA 5mA
0 2 4 6 8
0
0
25
50
75 85
Collector-emitter voltage VCE (V )
Ambient temperature Ta (C)
Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.20
Fig. 8 Dark Current vs. Ambient Temperature
10
-6
Collector-emitter saturation voltage VCE(sat) (V )
0.18 0.16 0.14 0.12 0.10 0.08 0.06
VF =10mA IC =40 A
10
5 2
-7
VCE= 20V
(A)
CEO
5 2
Dark current I
0 25 50 75 85
10
-8
5 2
10
-9
5 2
- 25
10
- 10
0
25
50
75
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig. 9 Response Time vs. Load Resistance
1000
VCE =5V 500 IC =100 A
tr tf
Test Circuit for Response Time
Response time (s)
100 50
td ts
VCC
Input Output Output
td tr ts tf 10% 90%
Input
RD
RL
10 5
0.1
1
5 10
50 100
1000
Load resistance R L (k )
GP1S25
Fig. 10 Detecting Position Characteristics (1)
100 90 IF =5mA VCE =5V
L=0 L
Fig. 11 Detecting Position Characteristics (2)
100 90 IF =5mA VCE =5V
L L=0
Relative collector current (%)
Relative collector current (%)
0.5 1 1.5 2 2.5
80 70 60 50 40 30 20 10 0 0
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5
2
Shield distance L (mm)
Shield distance L (mm)
q Please refer to the chapter "Precautions for Use".

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