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ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel) Features * * * * Current Transfer Ratio at IF = 10 mA Isolation Test Voltage, 5300 VRMS Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Dual Channel A1 C2 C3 A 4 8E 7C 6C 5E Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * FIMKO Quad Channel A1 C C A A C 2 3 4 5 6 7 8 16 E 15 C 14 C 13 E 12 E 11 C 10 C 9E Description The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CTR modulation. The ILD1/ 2/ 5 has two isolated channels in a single DIP package and the ILQ1/ 2/ 5 has four isolated channels per package. C A i179012 e3 Pb Pb-free Order Information Part ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 ILD1-X007 ILD1-X009 ILD2-X006 ILD2-X007 ILD2-X009 ILD5-X009 ILQ1-X009 ILQ2-X009 Remarks CTR > 20 %, DIP-8 CTR > 20 %, DIP-16 CTR > 100 %, DIP-8 CTR > 100 %, DIP-16 CTR > 50 %, DIP-8 CTR > 50 %, DIP-16 CTR > 20 %, SMD-8 (option 7) CTR > 20 %, SMD-8 (option 9) CTR > 100 %, DIP-8 400 mil (option 6) CTR > 100 %, SMD-8 (option 7) CTR > 100 %, SMD-8 (option 9) CTR > 50 %, SMD-8 (option 9) CTR > 20 %, SMD-16 (option 9) CTR > 100 %, SMD-16 (option 9) For additional information on the available options refer to Option Information. Document Number 83646 Rev. 1.4, 05-Nov-04 www.vishay.com 1 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.3 Unit V mA A mW mW/C Output Parameter Collector-emitter reverse voltage Test condition Part ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 Collector current t < 1.0 ms Power dissipation Derate linearly from 25 C Symbol VCER VCER VCER VCER VCER VCER IC IC Pdiss Value 50 50 70 70 70 70 50 400 200 2.6 Unit V V V V V V mA mA mW mW/C Coupler Parameter Isolation test voltage (between emitter and detector referred to standard climate 25 C/ 50 % RH, DIN 50014) Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Package power dissipation Derate linearly from 25 C Storage temperature Operating temperature Junction temperature Soldering temperature 2.0 mm from case bottom Tstg Tamb Tj Tsld RIO RIO Ptot Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 1012 10 11 mm mm mW mW/C C C C C 250 3.3 - 40 to + 150 - 40 to + 100 100 260 www.vishay.com 2 Document Number 83646 Rev. 1.4, 05-Nov-04 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Thermal resistance, junction to lead Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO TthJL Min Typ. 1.25 0.01 25 750 Max 1.65 10 Unit V A pF K/W Output Parameter Collector-emitter capacitance Collector-emitter leakage current Saturation voltage, collectoremitter DC forward current gain DC forward current gain saturated Thermal resistance, junction to lead Test condition VCE = 5.0 V, f = 1.0 MHz VVCE = 10 V ICE = 1.0 mA, IB = 20 A VCE = 10 V, IB = 20 A VCE = 0.4 V, IB = 20 A Symbol CCE ICEO VCESAT HFE HFEsat Rthjl 200 120 Min Typ. 6.8 5.0 0.25 650 400 500 50 0.4 1800 600 K/W Max Unit pF nA V Coupler Parameter Capacitance (input-output) Test condition VIO = 0 V, f = 1.0 MHz Symbol CIO Min Typ. 0.8 Max Unit pF Current Transfer Ratio Parameter Current Transfer Ratio (collector-emitter saturated) Test condition IF = 10 mA, VCE = 0.4 V Part ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 10 V ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 Symbol CTRCEsat CTRCEsat CTRCEsat CTRCE CTRCE CTRCE 20 100 50 Min Typ. 75 170 100 80 200 130 300 500 400 Max Unit % % % % % % Document Number 83646 Rev. 1.4, 05-Nov-04 www.vishay.com 3 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Typical Switching Times Non-saturated Switching Timing Parameter Test condition Symbol Unit ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 IF mA 20 5.0 10 tD s 0.8 1.7 1.7 Current Delay Rise time Storage Fall time Propagation H-L tPHL s 0.7 1.2 1.1 Propagation L-H tPLH s 1.4 2.3 2.5 VCE = 5.0 V, RL = 75 , 50 % of VPP tr s 1.9 2.6 2.6 tS s 0.2 0.4 0.4 tf s 1.4 2.2 2.2 Saturated Switching Timing Parameter Test condition Symbol Unit ILD1 ILQ1 ILD2 ILQ2 ILD5 ILQ5 IF mA 20 5.0 10 tD s 0.8 1.0 1.7 Current Delay Rise time Storage Fall time Propagation H-L tPHL s 1.6 5.4 2.6 Propagation L-H tPLH s 8.6 7.4 7.2 VCE = 0.4 V, RL = 1.0 k, VCC = 5.0 V, VTH = 1.5 V tr s 1.2 2.0 7.0 tS s 7.4 5.4 4.6 tf s 7.6 13.5 20 Common Mode Transient Immunity Parameter Common mode rejection, output high Common mode rejection, output low Common mode coupling capacitance Test condition VCM = 50 VP-P, RL = 1.0 k, IF = 0 mA VCM = 50 VP-P, RL = 1.0 k, IF = 10 mA Symbol CMH CML CCM Min Typ. 5000 5000 0.01 Max Unit V/s V/s pF www.vishay.com 4 Document Number 83646 Rev. 1.4, 05-Nov-04 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) IF VCC=5 V IF=10 mA VO F=10 KHz, DF=50% R L=75 VO tD tR tPLH VTH=1.5 V iild1_01 tPHL iild1_04 tS tF Figure 1. Non-saturated Switching Schematic Figure 4. Saturated Switching Timing IF V F - Forward Voltage - V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 10 I F - Forward Current - mA 100 TA = 100C TA = 25C TA = -55C t PHL VO tPLH tS 50% iild1_02 tD tR tF iild1_05 Figure 2. Non-saturated Switching Timing Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED Current CTRNF - Normalized CTR Factor 1.5 F=10 KHz, DF=50% IF=10 mA VCC=5 V RL VO 1.0 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C CTRce(sat) VCE = 0.4 V NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 100 I F - LED Current - mA iild1_03 iild1_06 Figure 3. Saturated Switching Schematic Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED Current Document Number 83646 Rev. 1.4, 05-Nov-04 www.vishay.com 5 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors CTRNF - Normalized CTR Factor 1.5 ICE - Collector Current - mA Normalized to: VCE = 10 V, IF = 10 mA, TA= 25C CTRce(sat) VCE = 0.4 V 1.0 TA= 50C NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 100 I F - LED Current - mA 35 30 25 20 15 10 5 0 0 iild1_10 50C 70C 85C 25C 10 20 30 40 50 60 iild1_07 IF - LED Current - mA Figure 7. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 10. Collector-Emitter Current vs. Temperature and LED Current 1.5 CTR - Normalized CTR Factor 10 5 Normalized to: VCE = 10 V, IF = 10 mA TA= 25C ICEO - Collector-Emitter - nA 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 -20 0 20 40 60 80 100 Typical Vce = 10 V 1.0 CTRce(sat) VCE = 0.4 V TA= 70C NCTR 0.5 NCTR(SAT) 0.0 .1 1 10 100 I F - LED Current - mA TA - Ambient Temperature - C iild1_11 iild1_08 Figure 8. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 11. Collector-Emitter Leakage Current vs.Temp. 1.5 NCTR - Normalized CTR 1000 tpLH - Propagation Low-High s 2.5 tpHL - Propagation High-Low s 1.0 Normalized to: V CE = 10 V, I F = 10 mA, TA = 25C CTRce(sat) VCE = 0.4 V TA = 85C NCTR Ta = 25C, IF = 10 mA Vcc = 5 V, Vth = 1.5 V tpHL 100 2.0 0.5 NCTR(SAT) 0.0 .1 1 10 IF - LED Current - mA 100 10 tpLH 1 .1 1 10 100 RL - Collector Load Resistor - k 1.5 1.0 iild1_09 iild1_12 Figure 9. Normalized Non-Saturated and Saturated CTR vs. LED Current Figure 12. Propagation Delay vs. Collector Load Resistor www.vishay.com 6 Document Number 83646 Rev. 1.4, 05-Nov-04 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) i178007 .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) Document Number 83646 Rev. 1.4, 05-Nov-04 www.vishay.com 7 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18450 www.vishay.com 8 Document Number 83646 Rev. 1.4, 05-Nov-04 ILD1/ 2/ 5 / ILQ1/ 2/ 5 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83646 Rev. 1.4, 05-Nov-04 www.vishay.com 9 |
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