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| ( DataSheet : www..com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1517/D The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 520 MHz, 7.5 Volts D Output Power -- 8 Watts Power Gain -- 11 dB Efficiency -- 55% * Characterized with Series Equivalent Large-Signal Impedance Parameters * Excellent Thermal Stability * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, G 520 MHz, 2 dB Overdrive * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request S * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517T1 520 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Drain-Source Voltage (1) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C (2) Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 25 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. (2) Calculated based on the formula PD = TJ - TC RJC Symbol RJC Max 2 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. www..com REV 1 MOTOROLA RF (c) Motorola, Inc. 2000 www..com DEVICE DATA MRF1517T1 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 120 Adc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Gps 10 50 11 55 -- -- dB % Ciss Coss Crss -- -- -- 66 38 6 -- -- -- pF pF pF VGS(th) VDS(on) gfs 1.0 -- 0.9 1.7 0.5 -- 2.1 -- -- Vdc Vdc S IDSS IGSS -- -- -- -- 1 1 Adc Adc Symbol Min Typ Max Unit MRF1517T1 2 MOTOROLA RF DEVICE DATA VGG C9 C8 + C7 R3 B1 R2 C18 B2 C17 C16 + C15 VDD L1 C6 R1 Z6 N1 RF INPUT C1 C2 C3 C4 C5 DUT Z1 Z2 Z3 Z4 Z5 C10 C11 C12 C13 Z7 Z8 Z9 Z10 C14 N2 RF OUTPUT B1, B2 C1 C2, C3, C4, C10, C12, C13 C5, C11 C6, C18 C7, C15 C8, C16 C9, C17 C14 L1 N1, N2 Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 43 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.315 x 0.080 Microstrip 1.415 x 0.080 Microstrip 0.322 x 0.080 Microstrip 0.022 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.625 x 0.080 Microstrip 0.800 x 0.080 Microstrip 0.589 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper Figure 1. 480 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 480 - 520 MHz 10 500 MHz Pout , OUTPUT POWER (WATTS) 8 480 MHz 520 MHz IRL, INPUT RETURN LOSS (dB) -5 0 6 -10 520 MHz 480 MHz 4 -15 500 MHz -20 VDD = 7.5 Vdc -25 2 VDD = 7.5 Vdc 0 0 0.2 0.4 0.6 Pin, INPUT POWER (WATTS) 0.8 1.0 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 Figure 2. Output Power versus Input Power Figure 3. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 3 TYPICAL CHARACTERISTICS, 480 - 520 MHz 18 500 MHz 16 520 MHz 14 GAIN (dB) 12 10 8 VDD = 7.5 Vdc 6 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 10 1 2 3 6 7 8 5 4 Pout, OUTPUT POWER (WATTS) 9 10 11 Eff, DRAIN EFFICIENCY (%) 480 MHz 70 60 50 40 30 20 VDD = 7.5 Vdc 520 MHz 500 MHz 480 MHz 80 Figure 4. Gain versus Output Power Figure 5. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 10 8 520 MHz 6 4 2 0 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Pin = 27 dBm VDD = 7.5 Vdc 480 MHz 500 MHz 80 70 480 MHz 500 MHz 60 520 MHz 50 Eff, DRAIN EFFICIENCY (%) 40 Pin = 27 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 30 Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 12 Pout , OUTPUT POWER (WATTS) 10 8 6 480 MHz 4 2 0 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Pin = 27 dBm IDQ = 150 mA 500 MHz 520 MHz Eff, DRAIN EFFICIENCY (%) 80 70 500 MHz 60 520 MHz 50 480 MHz 40 Pin = 27 dBm IDQ = 150 mA 5 6 7 8 9 10 30 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Drain Efficiency versus Supply Voltage MRF1517T1 4 MOTOROLA RF DEVICE DATA VGG C8 C7 + C6 R3 B1 R2 C17 B2 + C16 C15 C14 VDD L1 C5 R1 Z5 N1 RF INPUT C1 C2 C3 C4 DUT Z1 Z2 Z3 Z4 C10 C9 C11 C12 Z6 Z7 Z8 Z9 C13 N2 RF OUTPUT B1, B2 C1, C13 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 L1 N1, N2 Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board 12 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.617 x 0.080 Microstrip 0.723 x 0.080 Microstrip 0.513 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.048 x 0.080 Microstrip 0.577 x 0.080 Microstrip 1.135 x 0.080 Microstrip 0.076 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper Figure 10. 400 - 440 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 440 MHz 10 9 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 8 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 Pin, INPUT POWER (WATTS) 0.4 0.5 VDD = 7.5 Vdc -25 1 2 3 6 7 4 5 Pout, OUTPUT POWER (WATTS) 8 9 10 420 MHz 440 MHz 400 MHz -5 400 MHz 420 MHz -15 440 MHz 0 -10 -20 VDD = 7.5 Vdc Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 5 TYPICAL CHARACTERISTICS, 400 - 440 MHz 17 15 13 GAIN (dB) 11 9 7 VDD = 7.5 Vdc 5 1 2 3 4 6 7 8 5 Pout, OUTPUT POWER (WATTS) 9 10 0 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 400 MHz 440 MHz 420 MHz Eff, DRAIN EFFICIENCY (%) 70 60 50 40 400 MHz 30 20 10 VDD = 7.5 Vdc 9 10 11 440 MHz 420 MHz Figure 13. Gain versus Output Power Figure 14. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 10 8 6 4 2 0 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Pin = 25.5 dBm VDD = 7.5 Vdc 400 MHz 420 MHz 440 MHz Eff, DRAIN EFFICIENCY (%) 80 70 440 MHz 60 400 MHz 420 MHz 50 40 Pin = 25.5 dBm VDD = 7.5 Vdc 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 30 Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current 12 Pout , OUTPUT POWER (WATTS) 10 8 440 MHz 6 4 2 0 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Pin = 25.5 dBm IDQ = 150 mA 420 MHz 400 MHz Eff, DRAIN EFFICIENCY (%) 80 70 420 MHz 60 440 MHz 50 400 MHz 40 Pin = 25.5 dBm IDQ = 150 mA 5 6 7 8 9 10 30 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage Figure 18. Drain Efficiency versus Supply Voltage MRF1517T1 6 MOTOROLA RF DEVICE DATA VGG C8 C7 + C6 R3 B1 R2 C17 B2 C16 C15 VDD + C14 L1 C5 R1 Z5 N1 RF INPUT C1 C2 C3 C4 DUT Z1 Z2 Z3 Z4 C10 C9 C11 C12 Z6 Z7 Z8 Z9 C13 N2 RF OUTPUT B1, B2 C1 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 C13 L1 N1, N2 Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 mF, 50 V Electrolytic Capacitor 0.1 mF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.471 x 0.080 Microstrip 1.082 x 0.080 Microstrip 0.372 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.551 x 0.080 Microstrip 0.825 x 0.080 Microstrip 0.489 x 0.080 Microstrip Glass Teflon(R), 31 mils, 2 oz. Copper Figure 19. 440 - 480 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 440 - 480 MHz 10 9 Pout , OUTPUT POWER (WATTS) IRL, INPUT RETURN LOSS (dB) 8 7 6 5 4 3 2 1 0 0.0 0.2 0.4 0.6 Pin, INPUT POWER (WATTS) 0.8 VDD = 7.5 Vdc -25 1 2 3 5 4 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 480 MHz 460 MHz 440 MHz -5 0 -10 460 MHz 440 MHz -15 480 MHz -20 VDD = 7.5 Vdc Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 7 TYPICAL CHARACTERISTICS, 440 - 480 MHz 17 440 MHz 15 Eff, DRAIN EFFICIENCY (%) 460 MHz 13 GAIN (dB) 480 MHz 11 9 7 VDD = 7.5 Vdc 5 1 2 3 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) 9 10 0 1 2 3 70 60 50 40 30 20 10 VDD = 7.5 Vdc 5 4 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 11 480 MHz 440 MHz 460 MHz Figure 22. Gain versus Output Power Figure 23. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 10 8 460 MHz 6 4 2 Pin = 27.5 dBm 0 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 440 MHz Eff, DRAIN EFFICIENCY (%) 480 MHz 80 70 480 MHz 60 460 MHz 440 MHz 50 40 Pin = 27.5 dBm 30 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 24. Output Power versus Biasing Current Figure 25. Drain Efficiency versus Biasing Current 12 Pout , OUTPUT POWER (WATTS) 10 8 6 4 2 Pin = 27.5 dBm 0 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) 440 MHz 460 MHz 480 MHz 80 Eff, DRAIN EFFICIENCY (%) 70 480 MHz 60 460 MHz 440 MHz 50 40 Pin = 27.5 dBm 30 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage Figure 27. Drain Efficiency versus Supply Voltage MRF1517T1 8 MOTOROLA RF DEVICE DATA f = 440 MHz 520 Zin f = 480 MHz 520 ZOL* f = 480 MHz Zin 480 f = 440 MHz 400 Zin ZOL* f = 480 MHz 440 f = 440 MHz ZOL* 400 Zo = 10 Zo = 10 Zo = 10 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 480 500 520 Zin 1.06 +j1.82 0.97 +j2.01 0.975 +j2.37 ZOL* 3.51 +j0.99 2.82 +j0.75 1.87 +j1.03 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 440 460 480 Zin 1.62 +j3.41 1.85 +j3.35 1.91 +j3.31 ZOL* 3.25 +j0.98 3.05 +j0.93 2.54 +j0.84 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz 400 420 440 Zin 1.96 +j3.32 2.31 +j3.56 1.60 +j3.45 ZOL* 2.52 +j0.39 2.61 +j0.64 2.37 +j1.04 Zin = Complex conjugate of source impedance. Zin = Complex conjugate of source impedance. Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF1517T1 9 Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.84 0.84 0.86 0.88 0.90 0.92 0.94 0.95 0.96 0.96 0.97 -152 -164 -170 -171 -172 -172 -173 -173 -174 -175 -175 |S21| 17.66 8.86 4.17 2.54 1.72 1.28 0.98 0.76 0.61 0.50 0.40 S21 97 85 72 62 55 50 46 41 38 33 31 |S12| 0.016 0.016 0.015 0.014 0.013 0.013 0.014 0.010 0.011 0.011 0.006 S12 0 5 -5 -8 -25 -10 -22 -30 -14 -31 55 |S22| 0.77 0.78 0.79 0.80 0.83 0.84 0.86 0.86 0.86 0.85 0.88 S22 -167 -172 -173 -172 -172 -172 -171 -172 -171 -172 -171 IDQ = 800 mA f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.90 0.89 0.90 0.90 0.91 0.92 0.93 0.94 0.94 0.95 0.96 -165 -172 -175 -176 -176 -176 -176 -176 -176 -177 -177 |S21| 20.42 10.20 4.96 3.17 2.26 1.75 1.39 1.14 0.93 0.78 0.65 S21 94 87 79 73 67 63 59 55 51 45 43 |S12| 0.018 0.015 0.015 0.017 0.013 0.011 0.012 0.015 0.008 0.007 0.008 S12 1 -7 -12 -2 1 -6 -31 -34 -22 2 -40 |S22| 0.76 0.77 0.77 0.80 0.82 0.83 0.85 0.88 0.87 0.87 0.90 S22 -164 -170 -172 -171 -172 -171 -171 -171 -171 -172 -170 IDQ = 1.5 A f MHz MH 50 100 200 300 400 500 600 700 800 900 1000 S11 |S11| 0.92 0.90 0.91 0.91 0.92 0.93 0.94 0.94 0.95 0.96 0.97 -165 -172 -176 -176 -176 -176 -176 -176 -176 -177 -177 |S21| 19.90 9.93 4.84 3.10 2.22 1.73 1.39 1.12 0.93 0.78 0.64 S21 95 88 80 74 68 64 61 56 52 46 44 |S12| 0.017 0.018 0.016 0.014 0.014 0.016 0.013 0.013 0.009 0.008 0.012 S12 3 2 -4 -11 -14 -8 -24 -24 -12 10 4 |S22| 0.76 0.77 0.77 0.80 0.81 0.83 0.85 0.87 0.87 0.87 0.89 S22 -164 -170 -172 -172 -172 -171 -171 -171 -171 -173 -169 MRF1517T1 10 MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Cgs Source Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature MOTOROLA RF DEVICE DATA MRF1517T1 11 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MRF1517T1 12 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1517T1 13 NOTES MRF1517T1 14 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF1517T1 15 PACKAGE DIMENSIONS 0.146 3.71 U 2 ZONE X AF 3 4 NK G 1 D B Q E 0.89 (0.035) X 45 _ "5 _ STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF1517T1 16 EEE EEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE H J L R C P 10_ DRAFT S ZONE V 0.095 2.41 0.115 2.92 ZONE W 0.115 2.92 0.020 0.51 inches mm RESIN BLEED/FLASH ALLOWABLE SOLDER FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. CASE 466-02 ISSUE B DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MOTOROLA RF DEVICE DATA MRF1517/D |
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