 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description The PTF080601 is a 60-W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz -20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46 Features * * Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P-1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power * Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90 * Efficiency (%) * * * PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248 Output Power (dBm) RF Characteristics at TCASE = 25C unless otherwise indicated Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps D IMD Min -- -- -- Typ 18 42 -32 Max -- -- -- Units dB % dBc EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, P OUT = 30 W, f = 959.8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency Developmental Data Sheet 1 Symbol EVM (RMS) ACPR ACPR Gps D Min -- -- -- -- -- Typ 2.0 -61 -74 18 40 Max -- -- -- -- -- Units % dBc dBc dB % 2003-12-05 Developmental PTF080601 DC Characteristics at TCASE = 25C unless otherwise indicated Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, IDS = 1 A VDS = 28 V, IDQ = 550 mA VGS = 10 V, V DS = 0 V Symbol V(BR)DSS IDSS RDS(on) VGS IGSS Min -- -- -- -- -- Typ 65 1.0 0.1 3.2 -- Max -- -- -- -- 1.0 Units V A V A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) PTF080601A PTF080601E TSTG RJC RJC PTF080601E PD PTF080601A Symbol VDSS VGS TJ PD Value 65 -0.5 to +12 200 180 1.03 195 1.11 -40 to +150 0.972 0.897 Unit V V C W W/C W W/C C C/W C/W Developmental Data Sheet 2 2003-12-05 Developmental PTF080601 Type PTF080601A PTF080601E PTF080601F Package Outline 20248 30248 31249 Package Description Standard ceramic, flange Thermally enhanced, flange Thermally enhanced, no flange Marking PTF080601A PTF080601E PTF080601F Package Outline Specifications Package 20248 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet 3 2003-12-05 Developmental PTF080601 Package Outline Specifications Package 30248 (45 X 2.72 [.107]) C L D S 9.78 [.385] 19.43 0.51 [.765.020] +0.10 LID 9.40 -0.15 C L [.370 +.004 ] -.006 2X 4.830.51 [.190.020] G 2X R1.63 [.064] 4X R1.52 [.060] 2X 12.70 [.500] 27.94 [1.100] 1.02 [.040] 19.810.20 [.780.008] SPH 1.57 [.062] 3.760.38 [.140.015] 0.025 [.001] -A- 34.04 [1.340] 0.51 [.020] ERA-H-30248 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 0.051/0.025 [.004.002/.001] 5. Lids are toleranced with reference to leads. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet 4 2003-12-05 Developmental PTF080601 Package Outline Specifications Package 31248 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 0.051/0.025 [.004.002/.001] 5. Lids are toleranced with reference to leads. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Developmental Data Sheet 5 2003-12-05 PTF080601 Revision History: 2003-12-05 Previous Version: none Page Subjects (major changes since last revision) Developmental We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International Edition 2003-12-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 |
Price & Availability of PTF080601F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |