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| SLD304B Block-type 1000mW High Power Laser Diode Description The SLD304B is a high power laser diode mounted on a 3 x 3 x 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts. Features * Compact size * High power output * Hole for thermistor 3 x 3 x 5mm block Po = 1000mW Applications * Solid state laser excitation * Medical use Structure GaAlAs double hetero-type laser diode Absolute Maximum Ratings (Tc = 15C) * Optical power output * Recommended optical power output * Reverse voltage * Operating temperature * Storage temperature Pin Configuration No. 1 2 Function LD cathode LD anode 1 LD cathode Po 1000 Po 900 VR LD 2 Topr -10 to +30 Tstg -40 to +85 mW mW V C C 2 LD anode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E89106A81-PS SLD304B Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength Radiation angle Perpendicular to junction (F. W. H. M.) Parallel to junction Positional accuracy Position Angle Differential efficiency F. W. H. M. : Full Width at Half Maximum Symbol Ith Iop Vop p // X Y, Z D PO = 900mW 0.5 0.8 PO = 900mW PO = 900mW PO = 900mW PO = 900mW PO = 900mW 770 28 13 Conditions Min. Typ. 450 1400 2.1 Max. 700 2000 3.0 840 40 17 300 100 3 (Tc = 15C) Unit mA mA V nm degree m degree mW/mA -2- SLD304B Example of Representative Characteristics Optical power output vs. Forward current 1000 Threshold current vs. Temperature characteristics 1000 PO - Optical power output [mW] Ith - Threshold current [mA] Tc = 0C Tc = -10C Tc = 15C Tc = 30C Tc = 25C 500 500 100 -10 0 10 20 30 Tc - Case temperature [C] 0 0 500 1000 1500 2000 IF - Forward current [mA] Power dependence of far field pattern Radiation intensity (optional scale) (Parallel to junction) Radiation intensity (optional scale) Tc = 15C PO = 900mW Power dependence of near field pattern Tc = 15C PO = 900mW PO = 800mW PO = 600mW PO = 400mW PO = 200mW PO = 500mW PO = 200mW PO = 50mW 200m -30 -20 -10 0 10 20 30 Angle [degree] Oscillation wavelength vs. Temperature characteristics 830 PO = 900mW Differential efficiency vs. Temperature characteristics p - Oscillation wavelength [nm] 820 810 D - Differential efficiency [mW/mA] 1.0 800 0.5 790 780 -10 0 0 10 20 30 40 Tc - Case temperature [C] -10 0 10 20 30 40 Tc - Case temperature [C] -3- SLD304B Power dependence of polarization ratio TC = 15C 300 6 Po - Optical power output [W] 5 4 3 2 7 Optical power output vs. Operating current Pulse width = 1s Duty = 10% Tc = 15C PULSE Polarization ratio 200 100 CW 1 0 0 200 400 600 800 1000 1200 Po - Optical power output [mW] 0 0 1 2 3 4 5 6 7 Iop - Operating current [A] Pulse width dependence of COD power 10 5.0 COD output [W] Duty = 10% TC = 15C 1.0 0.5 0.1 0.1 0.5 1.0 5.0 10 50 100 Pulse width [s] COD (Catastrophic Optical Damage) -4- SLD304B Power Dependence of Wavelength Tc = 15C Po = 200mW Reletive radiant intensity Reletive radiant intensity Tc = 15C Po = 400mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 15C Po = 600mW Reletive radiant intensity Reletive radiant intensity Tc = 15C Po = 800mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tc = 15C Po = 1000mW Reletive radiant intensity 800 805 Wavelength [nm] 810 -5- SLD304B Temperature Dependence of Wavelength (PO = 90mW) Tc = -5C Tc = 0C Reletive radiant intensity 795 805 Wavelength [nm] 815 Reletive radiant intensity 795 805 Wavelength [nm] 815 Tc = 5C Tc = 10C Reletive radiant intensity 795 805 Wavelength [nm] 815 Reletive radiant intensity 795 805 Wavelength [nm] 815 Tc = 15C Tc = 20C Reletive radiant intensity 795 805 Wavelength [nm] 815 Reletive radiant intensity 795 805 Wavelength [nm] 815 -6- SLD304B Package Outline Unit: mm M - 261 5.0 0.1 O1.5 for Thermistor 1.7 LD Chip 1.0 1.5 Ceramic Contact Plate (LD Cathode) Body (LD Anode) 0.2 3.0 0.1 1.8 SONY CODE EIAJ CODE JEDEC CODE M-261 PACKAGE WEIGHT 1g -7- 3.0 0.1 0.3 0.2 1.5 PACKAGE STRUCTURE |
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