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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4 1.7 0.25 MAX. 1500 700 8 15 45 5.0 2.0 0.5 UNIT V V A A W V A V s Ths 25 C IC = 4 A; IB = 0.8 A f = 16kHz IF = 4 A ICsat = 4 A; f = 16kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Ths 25 C 1 Turn-off current. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES VCEOsust IEBO BVEBO Rbe VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS MIN. 700 7.5 5 TYP. 160 13.5 45 14 7 1.7 MAX. 1.0 2.0 5 1.1 9 2.0 UNIT mA mA V mA V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Emitter cut-off current VEB = 7.5 V; IC = 0 A Emitter-base breakdown voltage IB = 600 mA Base-emitter resistance VEB = 7.5 V Collector-emitter saturation voltages IC = 4 A; IB = 0.8 A Base-emitter saturation voltage DC current gain Diode forward voltage IC = 4 A; IB = 0.8 A IC = 1 A; VCE = 5 V IC = 4 A; VCE = 5 V IF = 4 A DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 4 A; IB(end) = 0.7 A; LB = 6 H; -VBB = 4 V TYP. 68 MAX. UNIT pF s s ts tf 5.0 0.25 6.0 0.5 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF TRANSISTOR IC DIODE ICsat 100 hFE VCE = 1 V BU2507DF/X Ths = 25 C Ths = 85 C t IB IBend t 20us 26us 64us 10 VCE t 1 0.01 0.1 1 IC / A 10 Fig.1. Switching times waveforms. Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V ICsat 90 % IC 100 hFE VCE = 5 V BU2507DF/X Ths = 25 C Ths = 85 C 10 % tf ts IB IBend t 10 t 1 0.01 0.1 10 - IBM 1 IC / A Fig.2. Switching times definitions. Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V + 150 v nominal adjust for ICsat 10 VCESAT / V Ths = 25 C Ths = 85 C BU2507DF/X 1mH 1 IC/IB = 3 IC/IB = 4 IC/IB = 5 D.U.T. IBend LB 12nF Rbe 0.1 -VBB 0.01 0.1 1 10 IC / A 100 Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB September 1997 3 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF 1.2 1.1 1 0.9 0.8 0.7 0.6 VBEsat / V BU2507DF/DX Ths = 25 C Ths = 85 C IC = 4 A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound IC = 3 A 0 0 0.5 1 1.5 IB / A 2 20 40 60 80 Ths / C 100 120 140 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC Fig.10. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) 10 Ptot / W BU2507AF/DF/AX/DX 10 Zth / K/W BU2507AF/X/DF/X Ths = 25 C Ths = 85 C 0.5 1 0.2 0.1 0.05 0.02 P D tp D= tp T t 1 0.1 0.01 D=0 T 0.1 0.001 1E-06 1E-4 10E-2 t/s 1E+00 0 0.5 1 IB / A 1.5 2 Fig.8. Typical losses. PTOT = f (IB); IC = 4 A; f = 16 kHz ts/tf/ us Fig.11. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T 10 BU2507AF/AX/Df/DX85ts/tf 8 6 4 2 0 0 0.5 1 1.5 IB / A 2 Fig.9. Typical collector storage and fall time. ts = f (IB); tf = f (IB); IC = 4.0 A; Tj = 85C; f = 16 kHz September 1997 4 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.200 |
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