 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FMA3016-QFN 3.5GHz High Power Amplifier for WiMAX applications FEATURES: * * * * * * 3.5GHz WiMAX power amplifier 17dB gain 2.5% EVM with 30dBm transmit power 10% PAE with 30dBm transmit power 10W Psat 20 lead air-cavity QFN with Cu lead frame Preliminary Datasheet v3.1 FMA3016-QFN EVALUATION BOARD: GENERAL DESCRIPTION: FMA3016-QFN is a high power packaged MMIC amplifier for 3.5GHz WiMAX applications. This device exhibits 17dB of gain, has a Psat of greater than 10W and 2.5% EVM with 10% PAE at 30dB transmit power with a 64 QAM OFDM signal. The part is packaged in a 20 lead air-cavity QFN (8x6x1.4mm) with a copper lead frame for enhanced thermal performance. TYPICAL APPLICATIONS: * * WiMAX 802.16 Broadband wireless ELECTRICAL SPECIFICATIONS: PARAMETER Frequency Range Gain Gain variation over temperature Input Return Loss Output Return Loss EVM @30dBm transmit power PAE @30dBm transmit power Output power at P1dB Output IP3 ACP @30dBm Pout OFDM signal OFDM signal CW conditions CW conditions 7MHz BW, Adjacent Channel Power measured in a 1MHz BW, offset by 7.5MHz from the centre frequency 9 10 38 50 -52 -40 to +85 deg C Base Plate Temperature CONDITIONS MIN 3.4 TYP 17 1.5 12 10 MAX 3.6 UNITS GHz dB dB dB dB 2.5 % % dBm dBm dBc Noise Figure Stability VD1, VD2 VG1, VG2 IDS Class AB to obtain optimum linearity Unconditional across all frequencies with appropriate decoupling networks 8 -1.2 10 dB 10 -0.5 1.2 V V A 1 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Drain Bias Voltage Storage Temp Tstor PACKAGE PIN OUT SYMBOL Pin ABSOLUTE MAXIMUM +32dBm +15V -55 to +150 C C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PACKAGE LAYOUT: THERMAL INFORMATION Parameter Test Conditions Tch RJC (C) (C/W) Vd = 8 V RJC Thermal Resistance 140 6 (Channel to backside of package) ID = 1.2 A Pdiss = 9.6 W 2 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 TYPICAL MEASURED PERFORMANCE ON-WAFER: Note: Measurement Conditions VD1, VD2= 10V & ID=700mA, TAMBIENT = 25 C Input Return Loss 0 20 Gain S11 -5 15 3.4 GHz 17.63 dB 3.6 GHz 18.11 dB -10 10 3.6 GHz -18.7 dB S21 -15 3.4 GHz -18.13 dB -20 5 -25 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 0 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 Reverse Isolation -40 0 Output Return Loss S22 -60 -5 -80 S12 -10 -100 -15 3.4 GHz -12.74 dB 3.6 GHz -11.44 dB -120 0.045 -20 5.04 10 Frequency (GHz) 15 20 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 3 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 TYPICAL MEASURED PERFORMANCE EVALUATION BOARD: NOTE: MEASUREMENT CONDITIONS VD1, VD2= 8V, TAMBIENT = 25 C EVM and Current Over Output Power 800 700 600 Current (mA) 500 400 1.40 300 200 100 0 0 5 10 15 20 25 30 35 Output Power 1.30 1.20 1.10 1.00 1.90 1.80 1.70 1.60 EVM (%) 1.50 Id1 (mA) Id2 (mA) EVM (%) 5 4.5 4 3.5 3 EVM (%) 2.5 2 1.5 1 0.5 0 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 Frequency (GHz) Board1 Board2 Board3 4 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 EVALUATION BOARD COMPONENT LAYOUT: VG1 VD1VG2 VD2 Vg1 10uF Vd1 10uF Vg2 10uF Vd2 10uF 100pF 100pF 100pF 100pF 100pF PORT P=1 Z=50 O hm M LI N ID =T L1 W =Ca p_ Int er um L =1 500 u m M SUB=" M SUB1" ML IN ID=TL 2 W=Cap _In ter u m L= 150 0 um MSUB= "M SUB1" PORT P=2 Z= 50 Oh m 100pF 100pF 100pF 10uF 10uF 10uF Vd1 Vg2 Vd2 VD1 VG2 VD2 BILL OF MATERIALS: LABEL Board P6, P7 P1, P2, P3, P4, P5 C1, C2, C3, C4, C5, C6, C7, C8, C9, C10,C11, C12,C13, C14,C15, C16,C17, C18, C19 Q1 COMPONENT Preferred evaluation board material is 30-mil thick ROGERS RT4350. All RF tracks should be 50-ohm characteristic material SMA RF edge connector DC connector Capacitor, 10uF, 0603 Capacitor, 100pF, 0603 FMA3016-QFN 5 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3016-QFN Preliminary Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: Please contact Filtronic Compound Semiconductors for further details. PART NUMBER FMA3016-QFN DESCRIPTION Packaged MMIC HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Preliminary Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com |
Price & Availability of FMA3016-QFN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |