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ISL9K860P3
April 2002
ISL9K860P3
8A, 600V StealthTM Dual Diode
General Description
The ISL9K860P3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49409.
Features
* Soft Recovery. . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 * Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns * Operating Temperature . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated
Applications
* Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode
Package
JEDEC TO-220AB
Symbol
K ANODE 2 CATHODE ANODE 1
CATHODE (FLANGE)
A1
A2
Device Maximum Ratings (per leg) TC= 25C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 147oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 8 16 16 100 85 20 -55 to 175 300 260 Units V V V A A A A W mJ C C C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
(c)2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
Package Marking and Ordering Information
Device Marking K860P3 Device ISL9K860P3 Package TO-220AB Tape Width Quantity -
Electrical Characteristics (per leg) TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current VR = 600V TC = 25C TC = 125C 100 1.0 A mA
On State Characteristics
VF Instantaneous Forward Voltage IF = 8A TC = 25C TC = 125C 2.0 1.6 2.4 2.0 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 30 pF
Switching Characteristics
trr trr IRRM QRR trr S IRRM QRR trr S IRRM QRR dIM/dt Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovery Charge Maximum di/dt during tb IF = 1A, dIF/dt = 100A/s, VR = 30V IF = 8A, dIF/dt = 100A/s, VR = 30V IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 25C IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 8A, dIF/dt = 600A/s, VR = 390V, TC = 125C 18 21 28 3.2 50 77 3.7 3.4 150 53 2.5 6.5 195 500 25 30 A nC A/s A nC ns ns ns ns A nC ns
Thermal Characteristics
RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220 1.75 62 C/W C/W
(c)2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
Typical Performance Curves
16 14 IF, FORWARD CURRENT (A) 12 10 8 100oC 6 4 2 0 0.1 100 175oC 150oC 25oC 125oC IR, REVERSE CURRENT (A) 100 175oC 150oC 10 125oC
100oC 1 25oC
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5 2.75
200
300
400
500
600
VF, FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
80 VR = 390V, TJ = 125C 70 tb AT dIF/dt = 200A/s, 500A/s, 800A/s t, RECOVERY TIMES (ns) 60 t, RECOVERY TIMES (ns) 50 40 30 20 10 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 0 0 2 4 6 8 10 12 14 16 IF, FORWARD CURRENT (A)
Figure 2. Reverse Current vs Reverse Voltage
90 VR = 390V, TJ = 125C 80 70 60 50 40 30 20 10 ta AT IF = 16A, 8A, 4A 0 100 200 300 400 500 600 900 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1000 tb AT IF = 16A, 8A, 4A
Figure 3. ta and tb Curves vs Forward Current
IRRM , MAX REVERSE RECOVERY CURRENT (A) 11 VR = 390V, TJ = 125C 10 9 8 7 6 5 dIF/dt = 200A/s 4 3 2 0 2 4 6 8 10 12 IF, FORWARD CURRENT (A) 14 16 dIF/dt = 500A/s IRRM , MAX REVERSE RECOVERY CURRENT (A) 14
Figure 4. ta and tb Curves vs dIF/dt
dIF/dt = 800A/s
VR = 390V, TJ = 125C 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/s) IF = 8A IF = 16A
IF = 4A
Figure 5. Maximum Reverse Recovery Current vs Forward Current
Figure 6. Maximum Reverse Recovery Current vs dIF/dt
(c)2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
Typical Performance Curves (Continued)
S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125C 5 350 VR = 390V, TJ = 125C 300 IF = 16A 250
4
IF = 16A IF = 8A
200
IF = 8A
3
150 IF = 4A 100
2
IF = 4A
1 100
200
300
400
500
600
700
800
900
1000
50 100
200
300
400
500
600
700
800
900
1000
dIF /dt, CURRENT RATE OF CHANGE (A/s)
dIF /dt, CURRENT RATE OF CHANGE (A/s)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt
1200 IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Reverse Recovery Charge vs dIF/dt
10
CJ , JUNCTION CAPACITANCE (pF)
1000
8
800
6
600
4
400
2
200
0 0.1 1 10 100 VR , REVERSE VOLTAGE (V)
0 140
145
150
155
160
165
170
175
TC, CASE TEMPERATURE (oC)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
1.0
THERMAL IMPEDANCE
ZJA, NORMALIZED
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.1
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
SINGLE PULSE
0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101
Figure 11. Normalized Maximum Transient Thermal Impedance
(c)2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
l.l
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF
L IF DUT RG CURRENT SENSE + VDD 0 0.25 IRM IRM dIF dt ta trr tb
VGE t1 t2
MOSFET
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 R + IL VDD DUT t0 t1 t2 t IV IL VAVL
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage Waveforms
(c)2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER
FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak
MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series
SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5

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