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| UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc (mas) = 350 mW 2 1 MARKING 3 1M SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCES VEBO Pc Ic Tj TSTG VALUE 30 30 10 350 500 150 -55 ~ +150 UNIT V V V mW mA C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product Pulse test: Pulse Width<300s, Duty Cycle=2% SYMBOL BVCES ICBO IEBO hFE VCE(sat) VBE(on) fT TEST CONDITIONS Ic=100A,IB=0 VCB=30V,IE=0 VEB=10V,Ic=0 VCE=5V,Ic=100mA Ic=100mA,IB=0.1mA VCE=5V,Ic=100mA VCE=5V,Ic=10mA, f=100MHz MIN 30 MAX 100 100 UNIT V nA nA V V MHz 10000 1.5 2.0 125 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-006,B UTC MMBTA13 TYPICAL CHARACTERISTICS NPN EPITAXIAL SILICON TRANSISTOR Current Gain & Collector Current 1000k I(tot) mA hFE hFE@VCE=5V 10000 Saturation Voltage & Collector Current 100k Saturation Voltage (mV) I(tot) mA VBE(sat)@IC=100IB 1000 VCE(sat)@IC=100IB 10k 0.1 1 10 100 Collector Current (mA) 1000 100 1 10 100 Collector Current (mA) 1000 On Voltage & Collector Current 10000 I(tot) mA Capacitance (pF) 10 Capacitance & Reverse-Biased Voltage On Voltage (mV) I(tot) mA 1000 VBE(on)@VCE=5V Cob 100 0.1 1 10 100 Collector Current (mA) 1000 1 1 10 Reverse-Biased Voltage(V) Safe Operating Area 100 Cutoff Frequency & Collector Current 1000 I(tot) mA VCE=5V 100 1000 Collector Current -Ic (mA) Cutoff Frequency (MHz) 100 I(tot) mA PT=1s PT=100ms PT=1ms 10 10 1 10 100 Collector Current (mA) 1000 1 1 10 Forward Voltage-VCE(V) 100 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R206-006,B UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR Power-Dissipation vs Ambient Temperature 1 PD-Power Dissipation(W) 0.75 I(tot) mA 0.5 0.25 0 0 25 75 100 50 Temperature () 125 150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R206-006,B |
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