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| NTE188 (NPN) & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current NTE188 NTE189 V(BR)CEO IC = 1mA, IB = 0, Note 2 V(BR)EBO IE = 100A, IC = 0 ICBO VCB = 80V, IE = 0 VCB = 60V, IE = 0 80 4 - - - - - - - - 100 100 V V nA nA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter OFF Characteristics (Note 3) DC Current Gain NTE188 hFE IC = 50mA, VCE = 1V IC = 250mA, VCE = 1V IC = 50mA, VCE = 1V NTE189 IC = 50mA, VCE = 1V IC = 50mA, VCE = 1V IC = 50mA, VCE = 1V Collector-Emitter Saturation Voltage NTE188 VCE(sat) IC = 250mA, IB = 10mA IC = 250mA, IB = 25mA NTE189 IC = 250mA, IB = 10mA IC = 250mA, IB = 25mA Base-Emitter ON Voltage NTE188 NTE189 Small-Signal Characteristics Current Gain-Bandwidth Product NTE188 NTE189 Output Capacitance NTE188 NTE189 Cob VCB = 10V, IE = 0, f = 100MHz fT IC = 250mA, VCE = 5V, f = 100MHz, Note 2 50 50 - - 150 100 6 10 - - 12 15 MHz MHz pF pF VBE(on) IC = 250mA, VCE = 5V 60 30 - 80 50 - - - - - - - 110 65 33 160 130 8 0.18 0.1 0.22 0.15 0.76 0.78 - - - - - - 0.4 - 0.5 - 1.2 1.2 V V V V V V Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) EBC .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab |
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