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| MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE CM200DY-24NF IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 108 930.25 3-M6 NUTS G2 4 48 0.25 62 E1 C2E1 E2 C1 G1 21.5 25 25 24 4-6.5 MOUNTING HOLES 18 14 7 18 14 7 18 14 8.5 6 15 TAB #110 t=0.5 E2 G2 30 +0.1 -0.5 C2E1 LABEL 22.2 30 E2 6 E2 C1 G1 E1 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC' = 112C*3 Pulse Pulse TC = 25C Conditions Ratings 1200 20 200 400 200 400 1130 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W C C V N*m N*m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6 Limits Typ. -- 7 -- 1.8 2.0 -- -- -- 1350 -- -- -- -- -- 7.5 -- -- -- 0.04 -- -- Max. 1 8 0.5 2.5 -- 47 4 0.9 -- 500 150 600 350 250 -- 3.2 0.11 0.19 -- 0.066*3 16 Unit mA V A V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : Tc' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Mar.2003 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 350 300 250 200 150 100 50 0 0 VGE = 20V 12 4 15 13 Tj = 25C VGE = 15V 3 11 2 10 9 2 4 6 8 10 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25C EMITTER CURRENT IE (A) 8 5 3 2 6 102 7 5 3 2 4 IC = 200A IC = 400A IC = 80A 2 Tj = 25C Tj = 125C 0 1 2 3 4 5 0 6 8 10 12 14 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Cies SWITCHING TIME (ns) 7 tf 5 td(on) 3 2 7 5 3 2 td(off) 101 7 5 3 2 102 tr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 Coes 100 7 5 3 2 101 7 5 3 2 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25C 10-1 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 trr Irr 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 25C Inductive load 23 5 7 103 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.11C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.19C/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 EMITTER CURRENT IE (A) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 800 1200 1600 2000 600 1000 1400 1800 GATE CHARGE QG (nC) Mar.2003 |
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