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| Avalanche Photodiode FEATURES * * * * * * * * Data rates up to 2.5Gb/s Operating temperature: -40c to 85C Photosensitive diameter: 30m High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA Low multipled dark current: 3nA Low excess noise factor: 5 at M=10 FPD5W1KX APPLICATIONS * 2.4 Gb/s optical transmission systems DESCRIPTION The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD) optimized for operation at 1550nm. This APD is designed for use in optical transmission systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances. The APD chip has a photosensitive area diameter of 30m. Fujitsu's advanced InP material technology realizes a high reliability planar structure device with wide bandwidth (large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is aligned to a hermetically sealed APD through a highly stable optical coupling system. ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) Ratings Parameter Storage Temperature Symbol Tstg Top Min. -40 Max. +85 Unit C C Operating Temperature -40 +85 APD Reverse Current IR 0 3(peak) mA APD Forward Current IF - 10 mA APD Reverse Voltage VR - VB V Note: Since VB may vary from device-to-device, VB data is attached to each device for reference. Edition 1.1 July 2004 1 FPD5W1KX Avalanche Photodiode OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40C to +85C, =1,310/1,550nm, unless otherwise specified) Parameter Symbol Test Conditions = 1,310nm, M=1, 25C = 1,550nm, M=1, 25C = 1,310/1,550nm, M=1, -40 ~ +85C = 1,610nm, M=1, 25C ID = 10A, 25C Note (1) 25C Dark Current ID VR=0.9 x VB 70C 85C 25C Mulitiplied Dark Current IDM M=1 70C 85C Excess Noise Factor F (x) M=10, f=30MHz, B=1MHz, Ipo=2A M=3 Cut-off Frequency fc RL=50, -3dB from 500kHz M=5, 10 M=20 Capacitance Optical Return Loss Maximum Multiplication Factor Note 1: =VB/dTc APD Responsivity R Min. 0.8 0.8 0.75 40 0.08 - Limits Typ. 0.85 0.92 0.7 50 0.12 15 1.5 4 Max. 60 0.15 40 800 1700 10 160 340 6.3 (0.8) 0.7 - Unit A/W APD Breakdown Voltage Temperature Coefficient of VB VB V V/C nA nA 2.0 2.5 1.5 30 30 (0.6) 3.0 3.0 3.0 0.55 40 GHz GHz GHz pF dB Ct ORL Mmax f=1MHz, VR=0.9 X VB Ipo=2A 2 Avalanche Photodiode Fig. 1 Responsivity vs. Wavelength 1.0 1.0 FPD5W1KX Fig. 2 Responsivity vs. Temperature 0.8 Responsivity, (A/W) Responsivity, (A/W) 0.6 Pin=2W, M=1 1310nm 1480nm 1550nm 1600nm 1620nm 0 50 100 Pin=2W, M=1 -40C +25C +85C 0.4 0.2 0.1 1300 1350 1400 1450 1500 1550 1600 1650 Wavelength, (nm) 0.0 -50 Temperature, Ta (C) Fig. 3 Dark Current vs. Reverse Voltage 10-4 10-5 100 Fig. 5 Multiplication Characteristics =1550nm, Pin=2W 25C 0C 10-6 Multiplication Factor, M Dark Current, ID (A) 10-7 10-8 10-9 10-10 10-11 10-12 0.1 85C 65C 45C 25C 0C -40C -25C 10 -25C -40C 45C 65C 85C 1 0 10 20 30 40 50 60 0 10 20 30 40 50 60 Reverse Voltage, VR (V) Reverse Voltage, VR (V) 3 FPD5W1KX Fig. 6 Multiplication Factor vs. Photocurrent 1000 Ta=25C, = 1,550nm Avalanche Photodiode Fig. 7A Frequency Response (Air Gap ~ 2mm) PCB (Air Gap ~ 2mm) Multiplication Factor, M 100 0.98VB 0.95VB 10 Mmax Relative Response (dB/div.) M=20 M=15 Ta = 25C, = 1,550nm, Pin=2W, AC coupled, RL = 50 M=10 M=5 M=3 M=2 0.9VB 1 0.1 1 10 100 Photocurrent at M=1, Ipo (A) 0 1 2 3 Frequency (GHz) Fig. 7B Frequency Response (Air Gap ~ 0mm) PCB (Air Gap ~ 0mm) Fig. 8 Cutoff Frequency vs. Multiplication Factor 100 Relative Response (dB/div.) M=15 M=10 M=5 M=3 M=2 Multiplication Factor, M M=20 Ta = 25C, = 1,550nm, Pin=2W, AC coupled, RL = 50 Ta = 25C, = 1,550nm, Pin=2W, AC coupled, RL = 50 10 Air Gap=0mm Air Gap=2mm 1 0 1 2 3 4 5 6 0.1 0.1 1 10 100 Frequency (GHz) Photocurrent at M=1, Ipo (A) 4 Avalanche Photodiode Fig. 9 Temperature Coefficient vs. Breakdown Voltage 0.3 Temperature Coeffcient of VB Excess Noise Factor, F 50 Ta = 25C, = 1,550nm, I = 2A, 20 po f = 30 MHz, B = 1 MHz FPD5W1KX Fig. 10 Excess Noise Factor vs. Multiplication Factor (%/C) 0.2 10 (V/C) 0.1 5 0 40 2 45 50 55 60 Breakdown Voltage, VB (V) 0 5 10 50 100 Multiplication Factor, M Fig. 11 Capacitance vs. Reverse Voltage 5 Ta = 25C f = 1MHz Capacitance, Ct (pF) 1 0.5 0.1 1 5 10 50 100 Reverse Voltage, VR (V) 5 FPD5W1KX "KX" PACKAGE 2 Avalanche Photodiode UNIT: mm 2 - R 1.25 2 - C1.5 o2.54 o6.0 MAX. 17.0 12.7 17.0 7.4 10 MIN. 1 2.0 3.7 7.4 3-o0.35 4 3 28 MAX. 1 2 ANODE CATHODE 3 CASE For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6 o0.9 1000 MIN. |
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