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RF Power Field Effect Transistor LDMOS, 800--2200 MHz, 2W, 28V
4/14/05
Preliminary
MAPLST0822-002PP
Features
Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability W-CDMA Performance at 2.17GHz, 28Vdc Average Output Power: 28dBm @ -39dBc ACPR Gain: 14.5dB (typ.) Efficiency: 23% (typ.) 10:1 VSWR Ruggedness at 2W (CW), 28V, 2.11GHz Performance at 960MHz, 26Vdc, P1dB Average Output Power: 2W min. Gain: 20dB (typ.) Efficiency: 50% (typ.) 10:1 VSWR Ruggedness at 2W, 26V, 960MHz
Package Style
PFP-16
Maximum Ratings
Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +15, -0.5 6.9 -65 to +150 150 Units Vdc Vdc W C C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 18 Unit C/W
NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 Adc) Gate Threshold Voltage (Vds = 26 Vdc, Id = 25 mA) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 25 mA) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 0.1 A) V(BR)DSS VGS(th) 65 2 -- -- -- 5 Vdc Vdc Symbol Min Typ Max Unit
VGS(Q)
3
--
5
Vdc
VDS(on)
--
0.30
--
Vdc
2
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
Characteristic RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) Drain Efficiency (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) Input Return Loss (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) Output VSWR Tolerance (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) GP EFF () IRL -- -- -- 14 38 -9 -- -- -- dB % dB Symbol Min Typ Max Unit
No Degradation In Output Power Before and After Test
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture shown in Figure 10) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W) Input Return Loss (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 35 mA, f = 1900 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W) Input Return Loss (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 35 mA, f = 1670 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) GP EFF () IRL -- -- -- 15 45 -11 -- -- -- dB % dB GP EFF () IRL -- -- -- 14.5 40 -10 -- -- -- dB % dB
No Degradation In Output Power Before and After Test
No Degradation In Output Power Before and After Test
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture shown in Figure 12) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W) Input Return Loss (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 50 mA, f = 960 MHz, POUT = 2 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) GP EFF () IRL -- -- -- 20 50 -12 -- -- -- dB % dB
No Degradation In Output Power Before and After Test
3
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
16
25
-41 -43 -45 28VDC, IDQ=35mA 3GPP WCDMA, Test Model 1 w /16DPCH
15
20 Efficiency (%)
Gain(dB)
14
15
13 28V DC, IDQ=35mA, 2.17GHz 3GPP W-CDMA, Test Model 1 w /16DPCH 18 20 21 22 23 24 25 26 27 28 POUT (dBm Avg.)
10
12
5
ACPR(dBc)
-47 -49 -51 -53 -55 18 19 20 21 22 23 24 25 26 27 28 POUT (dBm Avg.) ACPR (2.17GHz) ACPR (2.14GHz) ACPR (2.11GHz)
11
0
Graph 1. W-CDMA: Gain and Efficiency versus Output Power
Graph 2. W-CDMA: ACPR versus Output Power
16 15 14 13 Gain(dB) 12 11 10 9 8 7 6 28V DC, IDQ=35mA 18 20 22 24 26 28 30 32 33 34 35 POUT dBm
50 -25 40 -30 Efficiency (%) -35 IMD(dBc) -40 -45 -50 -55 -60 0 -65
IM 3 (2.17GHz) IM 5 (2.17GHz)
IM 3 (2.14GHz) IM 5 (2.14GHz)
IM 3 (2.11GHz) IM 5 (2.11GHz)
28V DC, IDQ=35mA 2-Tone, 100kHz Spacing
30
20
10
18
20
22
24
26
28
30
32
POUT (dBm Avg.)
Graph 3. CW: Gain and Efficiency versus Output Power
Graph 4. Two Tone: Intermodulation Distortion versus Output Power
4
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
16
1905MHz, 26VDC, IDQ=35mA
50 45
15
40 35
Gain(dB)
25 13 20 15 12 Gain Efficiency 11 15.0 20.0 22.0 24.0 26.0 28.0 30.0 31.0 32.0 32.5 33.0 33.5 10 5 0
POUT(dBm- Avg.)
Graph 5. PHS Power Gain and Drain Efficiency vs. Output Power
POUT(dBm- Avg.)
20 -50 21 22 23 24 25 26 27 28 29 30
1905MHz, 26VDC, IDQ=35mA
-55 -60
ACPR (600kHz offset) ACPR (900kHz offset)
ACPR(-dBc)
-65 -70 -75 -80 -85
Graph 6. PHS ACPR vs. Output Power
5
Eff. (%)
14
30
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
25 24 23 22 CW 26V DC, IDQ=50mA
50 45 40 35
Gain(dB)
20 19 18 17 16 15 25 26 27 28 29 30 31 32 33 34 Gain (960MHz) Gain (925MHz) Eff (960MHz) Eff (925MHz)
25 20 15 10 5 0
POUT (dBm)
Graph 7. Power Gain and Drain Efficiency vs. Output Power
POUT(dBm - Avg.)
22 -20 -25 -30 -35 -40
IMD(dBc)
23
24
25
26
27
28
29
30
31
960MHz, 26V DC, IDQ=50mA
-45 -50 -55 -60 -65 -70 -75
3rd Order IMD 5th Order IMD 7th Order IMD
Graph 8. Intermodulation Distortion vs. Output Power
6
Eff. (%)
21
30
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
C1,C8 Tantalum Surface Mt. Cap., 100 F, 35 V C2,C9 Ceramic Chip Capacitor, 0.1 F C3,C10 Ceramic Chip Capacitor, 1000 pF C4,C6,C11,C13 Chip Capacitor, 33 pF ATC100A C5,C7,C12 Chip Capacitor, 2.7 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1,L2 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST0822-002PP R1 Chip Resistor (0805), 100 Ohm
Z1 Z2 Z3 Z4 Z5 Z6 Z7
Distributed Microstrip Element, 0.040" x 0.046" Distributed Microstrip Element, 0.490" x 0.046" Distributed Microstrip Element, 0.180" x 0.026" Distributed Microstrip Element, 0.135" x 0.100" Distributed Microstrip Element, 0.175" x 0.046" Distributed Microstrip Element, 1.035" x 0.046" Distributed Microstrip Element, 0.125" x 0.046"
PC Board Rogers (RO4350) Duroid, 0.020:" thick, Er=3.5, 1 Oz Copper Both Sides
Figure 9. 1880--1920 MHz Test Fixture Schematic
Figure 10. 1880--1920 MHz Test Fixture Component Layout
M/A-COM 0822-002
7
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
C1,C9 Tantalum Surface Mt. Cap., 100 F, 35 V C2,C10 Ceramic Chip Capacitor, 0.1 F C3,C11 Ceramic Chip Capacitor, 1000 pF C4,C6,C12,C14 Chip Capacitor, 33 pF ATC100A C5,C7,C15 Chip Capacitor, 2.7 pF ATC100A C8,C13 Chip Capacitor, 1.2 pF ATC100A J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1,L2,L3 Inductor, 8 nH, CoilCraft A03T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST0822-002PP R1 Chip Resistor (0805), 100 Ohm
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
Distributed Microstrip Element, 0.050" x 0.046" Distributed Microstrip Element, 0.050" x 0.046" Distributed Microstrip Element, 0.235" x 0.046" Distributed Microstrip Element, 0.273" x 0.046" Distributed Microstrip Element, 0.105" x 0.026" Distributed Microstrip Element, 0.229" x 0.026" Distributed Microstrip Element, 1.036" x 0.046" Distributed Microstrip Element, 0.180" x 0.046" Distributed Microstrip Element, 0.050" x 0.046" Distributed Microstrip Element, 0.050" x 0.046"
PC Board Rogers (RO4350) Duroid, 0.020:" thick, Er=3.5, 1 Oz Copper Both Sides
Figure 11. 920--960 MHz Test Fixture Schematic
Figure 12. 920--960 MHz Test Fixture Component Layout
8
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
Figure 13. PFP-16 Pin Connections
9
RF Power LDMOS Transistor, 800-2200 MHz, 2W, 28V
MAPLST0822-002PP
4/14/05
Preliminary
Package Dimensions Test Fixture Circuit Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information.
10 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

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