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MBR40H100WT SWITCHMODETM Power Rectifier 100 V, 40 A
Features and Benefits
* * * * * *
Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) This is a Pb-Free Device
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SCHOTTKY BARRIER RECTIFIER 40 AMPERES 100 VOLTS
1 2, 4 3
Applications
* Power Supply - Output Rectification * Power Management * Instrumentation
Mechanical Characteristics:
* * * * *
Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
MARKING DIAGRAM
B40H100 AYWWG TO-247AC CASE 340L STYLE 2 A Y WW B40H100 G = Assembly Location = Year = Work Week = Device Code = Pb-Free Package
MAXIMUM RATINGS
Please See the Table on the Following Page
ORDERING INFORMATION
Device MBR40H100WTG Package TO-247 (Pb-Free) Shipping 30 Units/Rail
(c) Semiconductor Components Industries, LLC, 2006
August, 2006 - Rev. 1
1
Publication Order Number: MBR40H100WT/D
MBR40H100WT
MAXIMUM RATINGS (Per Diode Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TC = 148C, per Diode TC = 150C, per Device Peak Repetitive Forward Current (Square Wave, 20 kHz) TC = 144C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 10 and 11) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) Value 100 Unit V
A 20 40 40 200 +175 *65 to +175 10,000 400 > 400 > 8000 A A C C V/ms mJ V
IFRM IFSM TJ Tstg dv/dt WAVAL
THERMAL CHARACTERISTICS
Maximum Thermal Resistance - Junction-to-Case (min. pad) - Junction-to-Ambient (min. pad) RqJC RqJA 2.0 60 C/W
ELECTRICAL CHARACTERISTICS
Characterisitc Instantaneous Forward Voltage (Note 2) (IF = 20 A, TJ = 25C) (IF = 20 A, TJ = 125C) (IF = 40 A, TJ = 25C) (IF = 40 A, TJ = 125C) Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) Symbol vF Min - - - - - - Typ 0.74 0.61 0.85 0.72 2.0 0.0012 Max 0.80 0.67 0.90 0.76 mA 10 0.01 Unit V
iR
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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MBR40H100WT
IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 175C 10 150C 25C 125C 100 175C 10 150C 25C 125C
1.0
1.0
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
0.7 0.8 0.9 1.0 1.1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (A)
1.0E-01 IR, REVERSE CURRENT (A) 1.0E-02 1.0E-03 TJ = 125C TJ = 150C
1.0E-01
TJ = 150C TJ = 125C
1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 1.0E-07 1.0E-08 0 20 40 60 80 100 TJ = 25C
1.0E-04 1.0E-05 1.0E-06
TJ = 25C
1.0E-07 20 40 60 80
1.0E-08 0
100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
IF, AVERAGE FORWARD CURRENT (A)
32 28 24 20 16 12 8.0 4.0 0 120 130 Square Wave
IF(AV), AVERAGE FORWARD CURRENT (A)
dc
20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 RqJA = 60C/W No Heatsink 0 25 50 75 dc Square Wave 100 125 150 175 RqJA = 16C/W dc Square Wave
140
150
160
170
180
TC, CASE TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 5. Current Derating, Case, Per Leg http://onsemi.com
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Figure 6. Current Derating, Ambient, Per Leg
MBR40H100WT
PF(AV), AVERAGE POWER DISSIPATION (W) 30 28 24 20 16 12 8.0 4.0 0 0 4.0 8.0 12 16 20 24 28 30 IF(AV), AVERAGE FORWARD CURRENT (A) 10 0 20 40 60 80 100 dc 10000 TJ = 175C Square Wave C, CAPACITANCE (pF) 1000 TJ = 25C
100
VR, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
10 D = 0.5 0.2 0.1 0.05 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 P(pk) t1 t2
1
0.1
DUTY CYCLE, D = t1/t2 100 1000
Figure 9. Thermal Response Junction-to-Case
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MBR40H100WT
+VDD IL 10 mH COIL VD MERCURY SWITCH ID IL ID VDD t0 t1 t2 t BVDUT
S1
DUT
Figure 10. Test Circuit
Figure 11. Current-Voltage Waveforms
The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).
EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV -V DUT DD
EQUATION (2): 2 W [ 1 LI LPK AVAL 2
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MBR40H100WT
PACKAGE DIMENSIONS
TO-247 PSI CASE 340L-02 ISSUE D
-T- -B- U L
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 --- 4.50 3.55 3.65 6.15 BSC 2.87 3.12 ANODE CATHODE (S) ANODE 2 CATHODES (S) INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 --- 0.177 0.140 0.144 0.242 BSC 0.113 0.123
N A
1 2 3
-Q- 0.63 (0.025) P -Y-
M
TB
M
K
F 2 PL
W D 3 PL 0.25 (0.010)
M
J
DIM A B C D E F G H J K L N P Q U W
G
H
S
YQ
STYLE 2: PIN 1. 2. 3. 4.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MBR40H100WT/D

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