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| MBR6030PT - MBR6045PT 60A SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead Free Finish, RoHS Compliant (Note 3) Dim A TO-3P Min 1.88 4.68 20.63 18.5 2.1 0.51 15.38 1.90 2.9AE 3.78 5.2 0.89 1.82 2.92 11.70 3/4 Max 2.08 5.36 22.38 21.5 2.4 0.76 16.25 2.70 3.65AE 4.50 5.7 1.53 2.46 3.23 12.84 6.10 H A B B C D E G H J K S R P N J C K L G Mechanical Data * * * * * * * * Case: TO-3P Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Ordering Information: See Last Page Marking: Type Number Weight: 5.6 grams (approximate) Q D L M N P Q R S E M M All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage @ TC = 125C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop @ IF = 30A, TC = 25C @ IF = 30A, TC = 125C @ IF = 60A, TC = 25C @ TC = 25C @ TC = 100C Average Rectified Output Current Symbol VRRM VRWM VR VR(RMS) IO IFSM @ TA = 25C unless otherwise specified MBR 6030PT 30 21 MBR 6035PT 35 25 60 500 0.62 0.55 0.75 1.0 50 650 1.0 MBR 6040PT 40 28 MBR 6045PT 45 32 Unit V V A A VFM IRM CT RqJC Tj, TSTG V mA pF C/W C Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: -55 to +150 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30053 Rev. 4 - 2 1 of 3 www.diodes.com MBR6030PT - MBR6045PT a Diodes Incorporated 80 70 60 50 40 30 20 10 0 0 50 100 150 TC, CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve IFSM, PEAK FORWARD SURGE CURRENT (A) 600 8.3ms single half-sine-wave JEDEC method 100 IF, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE FORWARD CURRENT (A) 10 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10000 Tj = 25 C 500 CT, CAPACITANCE (pF) 400 300 1000 200 100 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 100 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance per Element 10 Tj = 100 C 1.0 0.1 Tj = 25 C 0.01 0 10 20 30 40 50 60 PEAK REVERSE VOLTAGE (V) Fig. 5 Typical Reverse Characteristics DS30053 Rev. 4 - 2 2 of 3 www.diodes.com MBR6030PT - MBR6045PT Ordering Information Device MBR6030PT MBR6035PT MBR6040PT MBR6045PT Notes: (Note 4) Packaging TO-3P TO-3P TO-3P TO-3P Shipping 30/Tube 30/Tube 30/Tube 30/Tube 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf DS30053 Rev. 4 - 2 3 of 3 www.diodes.com MBR6030PT - MBR6045PT |
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