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| MITSUBISHI SEMICONDUCTOR MGFC36V5867 5.8*6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 * 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 2MIN FEATURES *oe Class A operation Internally matched to 50(ohm) system *oe *oe High output power P1dB = 36dBm (TYP.) @ f=5.8 * 6.75 GHz *oe High power gain GLP = 10 dB (TYP.) @ f=5.8 * 6.75 GHz (1) 0.6 +/-0.15 12.9 +/-0.2 (2) (2) R-1.6 11.3 2MIN (3) 10.7 17.0 +/-0.2 APPLICATION VSAT VDS = 10 (V) ID=1.2(A) RG=100 (ohm) 1.6 RECOMMENDED BIAS CONDITIONS 4.5 +/-0.4 0.2 12.0 GF-8 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN < Keep safety first in your circuit designs! > ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Revese gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C (Ta=25deg.C) Ratings -15 -15 3.75 -10 21 Unit V V A mA mA W deg.C deg.C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. 25 175 -65 / +175 ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=25deg.C) Test conditions Limits Typ. 1 36.0 10.0 30 5 Unit Max. 3.75 -4.5 1.8 6 A S V dBm dB A % deg.C/W IDSS Saturated drain current gm Transconductance VGS(off) Pinch-off voltage P1dB Output power at 1dB gain GLP Linear power gain ID Drain Current P.A.E. Power added efficiency Rth(ch-c) Thermal resistance *1 : Channel-case VDS=3V,VGS=0V VDS=3V,ID=1.1A VDS=3V,ID=10mA VDS=10V,ID(RF off)=1.2A. f=5.8 * 6.75GHz *1 delta Vf method Min. 35.0 8.5 - MITSUBISHI ELECTRIC 2.6 +/-0.2 0.1 MITSUBISHI SEMICONDUCTOR MGFC36V5867 5.8*6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f 40 39 OUTPUT POWER P1dB(dBm) P1dB 38 37 36 GLP 35 34 33 32 31 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 FREQUENCY(GHz) VDS=10V IDS=1.2A 11 10 9 8 7 14 13 12 16 15 LINEAR POWER GAIN GLP(dB) S-Parameters (TYP.) f (GHz) 5.80 5.90 6.00 6.10 6.20 6.30 6.40 6.50 6.60 6.70 6.80 Magn. 0.48 0.47 0.46 0.44 0.42 0.40 0.39 0.37 0.37 0.38 0.41 S11 Angle(deg) 155 136 116 98 79 60 39 17 -7 -33 -58 Magn. 3.409 3.426 3.472 3.494 3.465 3.446 3.397 3.356 3.297 3.221 3.116 S21 Angle(deg) -29 -42 -55 -70 -84 -98 -112 -126 -141 -156 -171 Magn. 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 S12 Angle(deg) -76 -91 -104 -117 -132 -145 -157 -172 173 161 146 Magn. 0.33 0.29 0.26 0.24 0.21 0.20 0.19 0.18 0.18 0.18 0.19 S22 Angle(deg) 179 164 147 132 114 96 77 57 34 12 -12 S parameters ( Ta=25deg.C , VDS=10(V),IDS=1.2(A) ) MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFC36V5867 5.8 ~ 6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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