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| Silicon Piezoresistive Relative Pressure Sensor KPY 33-R Features Low pressure and temperature hysteresis Fast response High sensitivity and linearity Fatigue free monocrystaline silicon diaphragm giving high load cycle stability * High long term stability * Metal Housing * * * * TO-8-1 Type and Marking KPY 33-R Symbol Pressure Range 0 ... 0.1 Unit bar Ordering Code Q62705-K151 P0 ... PN Pin Configuration 1 2 3 4 5 6 7 8 +VOUT + VIN Not connected Temperature sensor Temperature sensor Shielding, to be connected to + Vin - VOUT - VIN Semiconductor Group 1 02.97 KPY 33-R Absolute Maximum Ratings Parameter Pressure overload Operating temperature range Storage temperature range Supply voltage Symbol Limit Values 1.0 - 40 ... + 125 - 50 ... + 150 12 Unit bar C C V PMAX TA Tstg VIN Electrical Characteristics at TA = 25 C and VIN = 5 V, unless otherwise specified. Parameter Bridge resistance Sensitivity Output voltage Offset voltage P = P0 Linearity error (Best fit straight line) P = P0 ... PN Pressure hysteresis P1 = P0, P2 = PN, P3 = P0 Symbol min. Limit Values typ. - 80.0 40.0 - 0.2 0.1 max. 8 - - + 25 0.5 - % Vfin % Vfin k mV/Vbar mV mV - 25 - - 4 56.0 28.0 Unit RB s Vfin V0 FL PH Electrical Characteristics at T1 = 25 C, T2 = 125 C, T3 = 25 C and VIN = 5 V, unless otherwise specified. Parameter Temperature coefficient of Vfin Temperature coefficient of V0 Temperature coefficient of RB Temperature hysteresis of V0; Vfin Symbol min. Limit Values typ. - - max. %/K - 0.19 - 0.05 - - 0.7 - 0.10 %/K + 0.05 %/K + 0.095 - 0.1 + 0.7 % v. Vfin Unit TCVfin TCV0 TCRB TH Semiconductor Group 2 KPY 33-R Package Outline TO-8-1 Weight approx. 3.3 g Dimensions in mm Exterior Packaging I.e. tubes, trays, boxes are shown in our Data Book "Package Information". Semiconductor Group 3 |
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