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| APM4542K Dual Enhancement Mode MOSFET (N-and P-Channel) Features * N-Channel 30V/7A, RDS(ON) =17m(typ.) @ VGS = 10V RDS(ON) =22m(typ.) @ VGS = 4.5V Pin Description D1 D1 D2 D2 * P-Channel -30V/-5.5A, RDS(ON) =35m(typ.) @ VGS =-10V RDS(ON) =51m(typ.) @ VGS =-4.5V S1 G1 S2 G2 Top View of SOP - 8 (8) D1 (7) D1 (3) S2 * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (2) G1 (4) G2 Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 (1) D2 (5) D2 (6) N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM 4542 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM 4542 K : APM 4542 XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM4542K Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 (TA = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation TA=25C TA=100C VGS=10V N Channel 30 20 7 28 2 P Channel -30 20 -5.5 -22 -2 Unit V A A C W C/W 150 -55 to 150 2 0.8 62.5 Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) Test Condition APM4542K Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-24V, VGS=0V TJ=85C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=20V, VDS=0V VGS=10V, IDS=7A RDS(ON) a N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 30 -1 -30 1 1.5 -1.5 2 -2 100 100 17 35 22 51 24 56 30 78 V A 1 V nA Drain-Source On-State Resistance VGS=-10V, IDS=-5.5A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A m Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM4542K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) Test Condition APM4542K Min. Typ. Max. Unit Diode Characteristics VSD a Diode Forward Voltage b ISD=2A, VGS=0V ISD=-2.3A, VGS=0V N-Ch P-Ch 0.7 -1.7 1.3 -1.3 V Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V, VDS=25V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-25V, N-Channel VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 P-Channel VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6 b N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 11 835 950 145 160 15 110 11 12 17 15 36 35 20 15 20 24 28 29 62 60 36 30 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time pF ns Gate Charge Characteristics Qg Qgs Qgd Notes: : Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDS=15V, VGS=10V, IDS=7A P-Channel VDS=-15V, VGS=-10V, IDS=-5.5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 19 33 1.6 5 3.6 4 25 43 nC a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM4542K Typical Characteristics N-Channel Power Dissipation 2.5 8 Drain Current 2.0 6 1.5 ID - Drain Current (A) Ptot - Power (W) 4 1.0 2 0.5 o o 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance im Duty = 0.5 0.2 it ID - Drain Current (A) s( 10 on )L 300s 1ms Rd 10ms 0.1 0.1 0.05 0.02 0.01 1 100ms 1s 0.01 Single Pulse Mounted on 1in pad o RJA : 62.5 C/W 2 0.1 DC TA=25 C 0.01 0.01 0.1 O 1 10 100 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) N-Channel Output Characteristics 30 VGS= 4, 5, 6, 7, 8, 9, 10V 40 35 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 25 ID - Drain Current (A) 30 25 20 15 10 5 VGS=4.5V 20 3V 15 VGS=10V 10 5 2V 0 0 1 2 3 4 5 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 30 1.6 Gate Threshold Voltage IDS =250A Normalized Threshold Voltage 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) 20 15 Tj=125 C o 10 Tj=25 C 5 o Tj=-55 C o 0 0 1 2 3 4 5 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) N-Channel Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 7A Source-Drain Diode Forward 30 Normalized On Resistance 10 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@T j=25 C: 17m 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 1400 1200 Frequency=1MHz Gate Charge 10 VDS=15V IDS =7A VGS - Gate - source Voltage (V) 30 8 C - Capacitance (pF) 1000 Ciss 800 6 600 400 200 Crss 0 0 5 10 15 20 25 Coss 4 2 0 0 4 8 12 16 20 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) P-Channel Power Dissipation 2.5 7 6 2.0 5 4 3 2 1 0.0 0 TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 o Drain Current 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) -ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 100 2 1 Thermal Transient Impedance Duty = 0.5 0.2 -ID - Drain Current (A) n) L 10 ds R im it (o 1ms 10ms 0.1 0.1 0.05 0.02 0.01 1 100ms 1s 0.01 0.1 DC Single Pulse 0.01 0.01 TA=25 C O 0.1 1 10 100 1E-3 1E-4 Mounted on 1in pad o RJA : 62.5 C/W 2 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) P-Channel Output Characteristics 24 VGS= -5, -6, -7, -8, -9, -10V -4V 80 70 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 20 VGS= -4.5V -ID - Drain Current (A) 60 50 40 30 20 10 16 12 VGS= -10V 8 4 -3V 0 0 2 4 6 8 10 0 4 8 12 16 20 24 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 22 20 1.75 Gate Threshold Voltage IDS= -250 1.50 16 Normalized Threshold Voltage 5 18 -ID - Drain Current (A) 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 14 12 10 8 6 4 2 0 0 1 2 3 4 Tj=125 C Tj=25 C o o Tj=-55 C o 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM4542K Typical Characteristics (Cont.) P-Channel Drain-Source On Resistance 1.8 VGS = -10V 1.6 IDS = -5.5A 10 Tj=150 C o Source-Drain Diode Forward 20 Normalized On Resistance 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 35m 0 25 50 75 100 125 150 o -IS - Source Current (A) 1.4 Tj=25 C 1 o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance 1500 Frequency=1MHz Gate Charge 10 VDS= -10V 9 ID= -5.5A -VGS - Gate - source Voltage (V) 30 1250 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 C - Capacitance (pF) 1000 Ciss 750 500 250 Crss 0 0 5 10 Coss 15 20 25 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM4542K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw APM4542K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw APM4542K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 12 www.anpec.com.tw APM4542K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 SOP-8 D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1 Ko t 2.1 0.1 0.30.013 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 (mm) Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 13 www.anpec.com.tw |
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