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HMC498LC4
v00.0904
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios & VSAT * Test Equipment & Sensors * Military End-Use
Features
+36 dBm Output IP3 Saturated Power: +26 dBm @ 23% PAE 22 dB Gain +5.0 V @ 250 mA Supply 50 Ohm Matched Input/Output RoHS Compliant 4x4 mm SMT Package
Functional Diagram
General Description
The HMC498LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless "Pb free" SMT package. Operating from 17 to 24 GHz, the amplifier provides 22 dB of gain, +26 dBm of saturated power and 23% PAE from a +5.0 V supply voltage. Noise figure is 4 dB while output IP3 is +36 dBm typical enabling the HMC498LC4 to function as a low noise front end as well as a driver amplifier. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC498LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V Typ.) 22 18 Min. Typ. 17 - 19 22 0.02 13 15 25 26.5 35 4.0 250 21.5 0.03 20 Max. Min. Typ. 19 - 23 22.5 0.02 13 15 24.5 25.5 36 4.0 250 22.5 0.03 18 Max. Min. Typ. 23 - 24 21 0.02 10 20 25.5 26.5 35.5 4.5 250 0.03 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA
* Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC498LC4
v00.0904
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
Broadband Gain & Return Loss
25 20 15
Gain vs. Temperature
26 24 22
5
AMPLIFIERS - SMT
5 - 513
RESPONSE (dB)
10 5 0 -5 -10 14 -15 -20 -25 12 14 16 18 20 22 24 26 28 FREQUENCY (GHz) 12 10 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
S11 S22
GAIN (dB)
S21
20 18 16
+25 C +85 C -40 C
Input Return Loss vs. Temperature
0
+25 C +85 C -40 C
Output Return Loss vs. Temperature
0
+25 C +85 C -40 C
-5 RETURN LOSS (dB) 20 21 22 23 24 25
RETURN LOSS (dB)
-5
-10
-10
-15
-15
-20
-20 16 17 18 19 FREQUENCY (GHz)
-25 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
P1dB vs. Temperature
30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -40 C
Psat vs. Temperature
30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC498LC4
v00.0904
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
5
AMPLIFIERS - SMT
Output IP3 vs. Temperature
40 38 36
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0
+25 C +85 C -40 C
34 OIP3 (dBm) 32 30 28 26 24 22 20 16 17 18 19 20 21 22 23 24 25 FREQUENCY (GHz)
+25 C +85 C -40 C
16
17
18
19
20
21
22
23
24
25
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage @ 23 GHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 40 38 36
Reverse Isolation vs. Temperature
0 -10 ISOLATION (dB) -20 -30 -40 -50 -60 -70
+25 C +85 C -40 C
34 32 30 28 26 24 22 20 4.5 5 Vdd Supply Voltage (Vdc) 5.5
Gain P1dB Psat OIP3
16
17
18
19
20
21
22
23
24
25
FREQUENCY (GHz)
Power Compression @ 18GHz
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 23 GHz
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm) Gain (dB) PAE (%)
Pout (dBm) Gain (dB) PAE (%)
-8
-6
-4
-2
0
2
4
6
8
10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
INPUT POWER (dBm)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC498LC4
v00.0904
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 18 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc -4.0 to 0 Vdc +10 dBm 175 C 1.62 W 55.6 C/W -65 to +150 C -40 to +85 C Class 1A
Typical Supply Current vs. Vdd
Vdd (Vdc) +4.5 +5.0 +5.5 Idd (mA) 239 250 262
5
AMPLIFIERS - SMT
5 - 515
Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250 mA at +5.0V.
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM - C - 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC498LC4
v00.0904
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number 1, 5-8, 10-14, 18, 20, 22, 24 Function N/C Description No connection required. These pins may be connected to RF/DC ground without affecting performance. Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. This pin is AC coupled and matched to 50 Ohms from 17 - 24 GHz. Interface Schematic
2, 4, 15, 17
GND
3
RFIN
9
Vgg
Gate control for amplifier. Adjust to achieve Id of 250 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 F are required.
16
RFOUT
This pad is AC coupled and matched to 50 Ohms from 17 - 24 GHz.
23, 21, 19
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 F are required.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC498LC4
v00.0904
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
Evaluation PCB
5
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 108537 [1]
Item J1, J2 J3 - J8 C1 - C4 C5 - C8 C9 - C12 U1 PCB [2] Description 2.92 mm PC mount K-connector DC Pin 100 pF capacitor, 0402 pkg. 1,000 pF Capacitor, 0603 pkg. 2.2F Capacitor, Tantalum HMC498LC4 Amplifier 108535 Evaluation PCB
[1] Reference this number when ordering complete evlaution PCB [2] Circuit Board Material: Rogers 4350.
The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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