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PD - 94034
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number IRF5NJZ48
BVDSS
IRF5NJZ48 55V, N-CHANNEL
55V
RDS(on) 0.016
ID 22A*
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 22* 22* 88 75 0.60 20 160 22 7.5 3.6 -55 to 150 300 (for 5 s) 1.0
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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11/10/00
IRF5NJZ48
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
55 -- -- 2.0 22 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.056 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.016 4.0 -- 25 250 100 -100 101 19 41 23 141 60 98 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 22A VDS = VGS, ID = 250A VDS = 25V, IDS = 22A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 22A VDS = 44V VDD = 28V, ID = 22A, RG = 5.1
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1900 620 270
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 22* 88 1.3 104 210
Test Conditions
A
V nS nC
Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.67
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF5NJZ48
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
4.5V
10
10
1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 22A
2.0
1.5
1.0
0.5
10 4.0
15
V DS = 25V 20s PULSE WIDTH 7.0 5.0 6.0 8.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5NJZ48
3500
3000
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 22A
16
VDS = 44V VDS = 27V VDS = 11V
2500
Ciss
2000
12
1500
C oss
8
1000
500
C rss
4
0 1 10 100
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80 100
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
10
TJ = 25 C
1
ID , Drain-to-Source Current (A)
TJ = 150 C
100
10 1ms Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 100
10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5NJZ48
60
LIMITED BY PACKAGE
50
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
40
-VDD
10V
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01
P DM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5NJZ48
300
EAS , Single Pulse Avalanche Energy (mJ)
15V
250
TOP BOTTOM ID 10A 14A 22A
VDS
L
D R IV E R
200
RG
D .U .T.
IA S
150
+ - VD D
A
10V 20V
tp
100
0 .01
50
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF5NJZ48
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=0.66mH Peak IAS = 22A, RG= 25
ISD 22A, di/dt 220 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 55V, TJ 150C
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 11/00
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