View IRFB4020PBF_631569.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97195
DIGITAL AUDIO MOSFET
Features
* Key parameters optimized for Class-D audio amplifier applications * Low RDSON for improved efficiency * Low QG and QSW for better THD and improved efficiency * Low QRR for better THD and lower EMI * 175C operating junction temperature for ruggedness * Can deliver up to 300W per channel into 8 load in half-bridge configuration amplifier
G S D
IRFB4020PBF
Key Parameters
200 80 18 6.7 3.2 175 V m: nC nC C
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
200 20 18 13 52 100 52 0.70 -55 to + 175
Units
V A
f f
c
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
300 10lbxin (1.1Nxm) Typ. --- 0.50 --- Max. 1.43 --- 62 Units C/W
Thermal Resistance
RJC RCS RJA Junction-to-Case
f
Parameter
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
f
Notes through are on page 2
www.irf.com
1
03/03/06
IRFB4020PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
Min.
200 --- --- 3.0 --- --- --- --- --- 24 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 0.23 80 --- -13 --- --- --- --- --- 18 4.5 1.4 5.3 6.8 6.7 3.2 7.8 12 16 6.3 1200 91 20 110 4.5 7.5 --- --- 100 4.9 --- 20 250 100 -100 --- 29 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- ns
Conditions
VGS = 0V, ID = 250A
V
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 11A V VDS = VGS, ID = 100A mV/C A nA S
e
VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 50V, ID = 11A VDS = 100V VGS = 10V ID = 11A See Fig. 6 and 18
nC
VDD = 100V, VGS = 10VAe ID = 11A RG = 2.4 VGS = 0V VDS = 50V = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 160V Between lead, 6mm (0.25in.) from package and center of die contact
G S D
pF
Avalanche Characteristics
Parameter Typ. Max. Units mJ A mJ
EAS IAR EAR
Single Pulse Avalanche Energyd Avalanche CurrentAg Repetitive Avalanche Energy
g
--- 94 See Fig. 14, 15, 16a, 16b
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr
Notes:
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 82 280 18 A 52 1.3 120 420 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 25C, IF = 11A di/dt = 100A/s
(Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
e
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.62mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
2
www.irf.com
IRFB4020PBF
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
5.0V 1
0.1 5.0V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
60s PULSE WIDTH
Tj = 25C 0.1 0.1 1
60s PULSE WIDTH
Tj = 175C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VDS = 25V 60s PULSE WIDTH T J = 175C
Fig 2. Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
3.0 2.5
(Normalized)
ID, Drain-to-Source Current (A)
ID = 11A VGS = 10V
10
2.0 1.5 1.0 0.5 0.0
1
T J = 25C
0.1 2 3 4 5 6 7 8
-60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
10000
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 11A
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = C ds + C gd
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
1000
Ciss
VDS= 160V VDS= 100V VDS= 40V
Coss 100 Crss 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
3
IRFB4020PBF
100
1000
T J = 175C
ISD, Reverse Drain Current (A)
10
ID, Drain-to-Source Current (A)
100 10 1
OPERATION IN THIS AREA LIMITED BY R DS(on)
T J = 25C 1
100sec 0.1 0.01 0.001 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Tc = 25C Tj = 175C Single Pulse 1msec 10msec
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
DC
Fig 7. Typical Source-Drain Diode Forward Voltage
20
VGS(th) , Gate Threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
18 16
ID, Drain Current (A)
14 12 10 8 6 4 2 0 25 50 75 100 125 150 175 T J , Junction Temperature (C)
4.0 ID = 100A 3.0
2.0
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Junction Temperature
10
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.0283 0.3659 0.7264 0.3093
i (sec)
0.000007 0.000140 0.001376 0.007391
0.1
J
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRFB4020PBF
RDS(on), Drain-to -Source On Resistance (m )
300
400
EAS , Single Pulse Avalanche Energy (mJ)
ID = 11A
275 250 225 200 175 150 125 100 75 50 5 6 7 8 9 T J = 25C
300
ID TOP 1.6A 2.4A BOTTOM 11A
T J = 125C
200
100
0
10 11 12 13 14 15 16
25
50
75
100
125
150
175
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
1000
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Avalanche Current (A)
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
10
0.01 0.05
1
0.10
0.1
0.01 1.0E-06
1.0E-05
1.0E-04 tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current Vs.Pulsewidth
100
EAR , Avalanche Energy (mJ)
80
TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 11A
60
40
20
0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C)
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
www.irf.com
5
IRFB4020PBF
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
LD VDS
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b Gate Charge Waveform
6
www.irf.com
IRFB4020PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A
Note: "P" in assembly line position indicates "Lead-Free"
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/06
www.irf.com
7

▲Up To Search▲

Price & Availability of IRFB4020PBF

	To Download IRFB4020PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .