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PD - 90823A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
400Volt, 0.22, MEGA RAD HARD HEXFET
International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
(R)
IRHM7360 IRHM8360
N CHANNEL
MEGA RAD HARD
Product Summary
Part Number IRHM7360 IRHM8360 BVDSS 400V 400V RDS(on) 0.22 0.22 ID 22A 22A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 22 14 88 250 2.0 20 500 22 25 4.0 -55 to 150
Pre-Irradiation
IRHM7230, IRHM8230 Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 (0.063 in. (1.6mm) from case for 10s) 9.3 (typical)
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10/28/98
IRHM7360, IRHM8360 Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
400 -- -- -- 2.0 6.0 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.45 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.22 0.25 4.0 -- 50 250 100 -100 210 45 120 33 59 140 75 -- -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 14A VGS = 12V, ID = 22A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 14A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID =22A VDS = Max Rating x 0.5 VDD = 200V, ID = 22A, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain Modified MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
5600 990 380
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 22 88 1.8 1000 11
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF =22A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.21 -- 0.5 -- 48
C/W
Test Conditions
Typical socket mount
2
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Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier comprises three radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 6 and a VDS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHM7360. Post-irradiation limits of the devices irradiated to 1 x 106 Rads (Si) are presented in
IRHM7360, IRHM8360 Devices
Table 1, column 2, IRHM8360. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/ Sec (See Table 2). International Rectifier radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHM7360 IRHM8360
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=0.8 x Max Rating, VGS =0V VGS = 12V, ID = 14A TC = 25C, IS = 22A, VGS = 0V
Min Drain-to-Source Breakdown Voltage 400 Gate Threshold Voltage 2.0 Gate-to-Source Leakage Forward -- Gate-to-Source Leakage Reverse -- Zero Gate Voltage Drain Current -- Static Drain-to-Source -- On-State Resistance One Diode Forward Voltage --
Max -- 4.0 100 -100 50 0.22 1.8
Min 400 1.25 -- -- -- -- --
Max -- 4.5 100 -100 100 0.31 1.8 V nA A V
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max Units Test Conditions -- -- 320 -- -- 320 V Applied drain-to-source voltage during gamma-dot -- 6.4 -- -- 6.4 -- A Peak radiation induced photo-current -- -- 16 -- -- 2.3 A/sec Rate of rise of photo-current 20 -- -- 137 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1x 105
Range (m)
~41
VDSBias (V)
275
VGS Bias (V)
-5
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IRHM7360, IRHM8360 Devices
Post-Irradiation
Fig 1. Typical Response of Gate Threshold Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure
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Post-Irradiation
IRHM7360, IRHM8360 Devices
Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level
Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation
Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation
Fig 9. High Dose Rate (Gamma Dot) Test Circuit
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IRHM7360, IRHM8360 Devices
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Radiation Characterstics
Fig 10. Typical Output Characteristics Pre-Irradiation
Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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Radiation Characterstics
IRHM7360, IRHM8360 Devices
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 320 Vdc
Fig 14. Typical Output Characteristics Pre-Irradiation
Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si)
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IRHM7360, IRHM8360 Devices
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7360, IRHM8360 Devices
30
Fig 22. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode Forward Voltage
Fig 25. Maximum Safe Operating Area
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IRHM7360, IRHM8360 Devices
Pre-Irradiation
V DS VGS RG
RD
D.U.T.
+
-V DD
12V
Pulse Width 1 s Duty Factor 0.1 %
Fig 27a. Switching Time Test Circuit
VDS 90%
10% VGS
Fig 26. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 27b. Switching Time Waveforms
Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7360, IRHM8360 Devices
1 5V
VD S
L
D R IV E R
RG
D .U .T
IA S
+ - VD D
A
12V 20V
tp
0 .0 1
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S tp
Fig 29c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 29b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig30a. Basic Gate Charge Waveform
Fig 30b. Gate Charge Test Circuit
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IRHM7360, IRHM8360 Devices
See Figures 18 through 30 for pre-radiation
curves
Pre-Irradiation
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, codition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-irradiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications.
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. VDD = 25V, Starting TJ = 25C, Peak IL = 22A, RG =2.35 ISD 22A, di/dt 120A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- TO-254AA
.1 2 ( .0 0 5 ) 3.7 8 ( .14 9 ) 3.5 3 ( .13 9 ) -A 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 6 .6 0 ( .2 6 0 ) 6 .3 2 ( .2 4 9 ) -B 1 .2 7 ( .05 0 ) 1 .0 2 ( .04 0 )
1 7 .4 0 ( .6 8 5 ) 1 6 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 )
2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 )
1 3 .84 ( .5 4 5 ) 1 3 .59 ( .5 3 5 )
LEG END 1 - C O L L E C TO R W 2 - E M ITTE R 3 - G A TE
1
2
3 -C-
123
3X 3 .81 ( .1 5 0 ) 2X N O TE S :
1 .1 4 ( .0 45 ) 0 .8 9 ( .0 35 ) .5 0 ( .0 2 0 ) .2 5 ( .0 1 0 ) M C AM B MC
3 .8 1 ( .1 5 0 )
1 . D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 98 2 . 2 . A L L D IM E N S IO N S A R E S H O W N IN M ILL IM E TE R S ( IN C H E S ).
LEGEND 1- DRAIN 2- SOURCE 3- GATE
LEGEND 1- DRAIN 2- SOURCE 3- GATE
Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches ) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98
12
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