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PD-94237F
RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2)
Product Summary
Part Number IRHSNA57Z60 IRHSNA53Z60 IRHSNA54Z60 IRHSNA58Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 3.5m 3.5m 3.5m 4.0m QG 200nC 200nC 200nC 200nC SMD-2
IRHSNA57Z60 30V, N-CHANNEL
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC n n n n
Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSLNA57Z60 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR IF (AV)@ TC = 25C IF (AV)@ TC =100C TJ, TSTG Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Schottky and Body Diode Avg. Forward Current Schottky and Body Diode Avg. Forward Current Opeating and Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page
Pre-Irradiation
Units
75* 75* 300 250 2.0 20 500 75 25 75* 75* -55 to 150 300 (for 5s) 3.3 (Typical)
A
W
W/C
V mJ A mJ A C g
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1
09/06/02
IRHSNA57Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min
30 -- 2.0 45 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -- -- -- -- -- -- 3.5 4.0 -- 50 50 V m V S( ) A mA
Test Conditions
VGS = 0V, ID = 1.0mA VGS = 12V, ID = 45A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 45A VDS = 24V, VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A, VDS = 15V VDD = 15V, ID = 45A, VGS =12V, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
-- 100 -- -100 -- 200 -- 55 -- 40 -- 35 -- 160 -- 78 -- 26 7.03 --
nA nC
ns
nH
Measured from center of drain pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD Diode Forward Voltage
Min Typ Max Units
-- -- -- -- -- -- -- 1.15 -- 1.05 -- 0.95 -- 175 -- 500 8.09 --
Test Conditions
TJ = -55C, ID=45A, VGS = 0V TJ = 25C, ID= 45A, VGS = 0V TJ = 110C, ID=45A, VGS = 0V Tj = 25C, IF =45A, di/dt 100A/s VDS 30V Measured from center of drain pad to center of source pad (for Schottky only)
V
nS nC nH
trr Reverse Recovery Time QRR Reverse Recovery Charge LS + LD Total Inductance ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC RthJC Junction-to-Case (MOSFET) Junction-to-Case (Schottky)
Min Typ Max
-- -- -- -- 0.5 0.7
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
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Radiation Characteristics
IRHSNA57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 30 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 4.0 3.5 1.3 30 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 5.0 4.0 1.3 V nA A m m V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS= 24V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 45A
1. Part numbers IRHSNA57Z60, IRHSNA53Z60 and IRHSNA54Z60 2. Part number IRHSNA58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 37.9 59.4 80.3 Energy (MeV) 255 290 313 VDS (V) Range (m) @V GS=0V @V GS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 33.4 30 30 30 25 20 28.8 25 25 20 15 10 26.5 22.5 22.5 15 10 --
35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHSNA57Z60
Pre-Irradiation
10000
I D , Drain-to-Source Current (A)
1000
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
10
4.5V
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
I D , Drain-to-Source Current (A)
100
TJ = 150 C
1.5
TJ = 25 C
10
1.0
0.5
1 4.0
V DS = 15V 20s PULSE WIDTH 7.0 5.0 6.0 8.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHSNA57Z60
20
ID = 45A
VGS , Gate-to-Source Voltage (V)
16
VDS = 24V VDS = 15V
12
8
4
0 0 50 100 150 200 250 300
QG , Total Gate Charge (nC)
Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 5a. Basic Gate Charge Waveform
Fig 5b. Gate Charge Test Circuit
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IRHSNA57Z60
Pre-Irradiation
200
LIMITED BY PACKAGE
VGS
150
VDS
RD
D.U.T.
+
RG
I D , Drain Current (A)
- VDD
VGS
100
Pulse Width 1 s Duty Factor 0.1 %
Fig 7a. Switching Time Test Circuit
50
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 6. Maximum Drain Current Vs. Case Temperature
Fig 7b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
6
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Pre-Irradiation
IRHSNA57Z60
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
ID 33.5A 47.4A BOTTOM 75A TOP
800
600
400
200
0 25 50 75 100 125 150
Starting T J, Junction Temperature
( C)
Fig 9. Maximum Avalanche Energy Vs. Drain Current
15V
V (B R )D SS tp
VD S
L
DR IV E R
RG
2VV 0 GS tp
D.U .T.
IA S
+ V - DD
A
0.01
IAS
Fig 9a. Unclamped Inductive Test Circuit
Fig 9b. Unclamped Inductive Waveforms
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IRHSNA57Z60
Pre-Irradiation
MOSFET Body Diode & Schottky Diode Characteristics
100
Instantaneous Forward Current - I S (A)
10
Tj = 110C Tj = 25C
Tj = -55C
1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V SD (V)
Fig. 10 - Typical Forward Voltage Drop Characterstics
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
8
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Pre-Irradiation
IRHSNA57Z60
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature Pulse width 300 s; Duty Cycle 2% 50% Duty Cycle, Rectangular
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Specified Radiation Characteristics are for Radiation Hardened MOSFET die only.
VDD = 25V, starting TJ = 25C, L= 0.3 mH
Peak IL = 75A, VGS = 12V
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/02
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