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Advance Technical Data
HiPerFAST TM IGBT with Diode
Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching
IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ)
= 600 V = 75 A < 1.8 V = 100 ns
Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ VCE 600 V TC = 25C
Maximum Ratings 600 600 20 30 75 60 300 ICM = 150 500 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-264 AA (IXGK)
(TAB) C E
G
PLUS247 (IXGX)
(TAB)
G = Gate E = Emitter
C = Collector Tab = Collector
W C C C Features * Square RBSOA * High current handling capability * MOS Gate turn-on for drive simplicity * Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications * Switch-mode and resonant-mode power supplies * Uninterruptible power supplies (UPS) * DC choppers * AC motor speed control * DC servo and robot drives
Mounting torque, TO-264 TO-264 PLUS247
1.13/10 Nm/lb.in. 10 6 300 g g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125C 5.0 300 5 100 1.8 V A mA nA V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V Note 1
Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw
(c) 2003 IXYS All rights reserved
DS99114(11/03)
IXGK 60N60B2D1 IXGX 60N60B2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 40 58 3900 340 100 170 25 57 28 Inductive load, TJ = 25C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 3.3 30 160 270 100 170 1.0 28 36 1.5 310 240 2.8 0.15 S pF pF pF nC nC nC
Dim. Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max.
TO-264 AA Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
ns ns ns ns ns ns mJ ns ns mJ 0.25 K/W K/W
2.5 mJ
Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
PLUS247 Outline
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, VGE = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150C 2.1 1.4 8.3 35 V V A ns 0.85 K/W
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/ TJ = 100C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t 300 s, duty cycle 2 %
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGK 60N60B2D1 IXGX 60N60B2D1
Fig. 1. Output Characteristics @ 25 Deg. C
100 90 80 70 350 VGE = 15V 13V 11V 9V 300 250 7V VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25 deg. C
I C - Amperes
60 50 40 30 20 10 0 0.5 1 1.5 2
I C - Amperes
9V 200 150 7V 100 50 5V 0
5V
2.5
3
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
100 90 80 VGE = 15V 13V 11V 9V 1.4 1.3
0
1
2
3
V C E - Volts
4
5
6
7
8
Fig. 4. Dependence of V CE(sat) on Tem perature
V GE = 15V
I C = 100A
I C - Amperes
70 60 50 40 30 20 10 0 0.5 1 1.5 2
7V
V C E (sat)- Normalized
1.2 1.1 1.0 0.9 0.8 0.7 0.6
I C = 50A
5V
I C = 25A
2.5
3
-50
-25
0
25
50
75
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
3.7 3.4 3.1 TJ = 25C 250 200 300
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
VC E - Volts
2.8 2.5 2.2 1.9
I C - Amperes
I C = 100A 50A 25A
150 100 50 TJ = 125C -40C TJ = 25C
1.6 1.3 5 6 7 8 9 10 11 12 13 14 15 16 17 0 4 5 6 7 8 9 10
V G E - Volts
(c) 2003 IXYS All rights reserved
V G E - Volts
IXGK 60N60B2D1 IXGX 60N60B2D1
Fig. 7. Transconductance
100 90 80 TJ = -40C 25C 125C 10 9 8 TJ = 125C VGE = 15V VCE = 400V I C = 100A
Fig. 8. Dependence of Turn-Off Energy on RG
g f s - Siemens
E off - milliJoules
70 60 50 40 30 20 10 0 0
7 6 5 4 3 2 1
I C = 50A
I C = 25A
50
100
150
200
250
300
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic
7 6 R G = 3.3 VGE = 15V VCE = 400V 7 6 5 4 3 2 1
0
5
10
15
R G - Ohms
20
25
30
35
40
45
50
Fig. 10. Dependence of Turn-Off Energy on Tem perature
R G = 3.3 VGE = 15V VCE = 400V I C = 100A
E off - MilliJoules
4 3 2 1 0 20 30
TJ = 125C
E off - milliJoules
5
I C = 50A
TJ = 25C
I C = 25A 0 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
1200 1100 400
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic td(off) tfi - - - - - R G = 3.3 VGE = 15V VCE = 400V TJ = 125C
Switching Time - nanosecond
1000 900 800 700 600 500 400 300 200 0
TJ = 125C VGE = 15V VCE = 400V
Switching Time - nanosecond
td(off) tfi - - - - - -
350 300 250 200 150 TJ = 25C 100 50
I C = 25A I C = 50A I C = 100A
5
10
15
20
25
30
35
40
45
50
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
20
30
40
I C - Amperes
50
60
70
80
90
100
IXGK 60N60B2D1 IXGX 60N60B2D1
Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature
350 15
Fig. 14. Gate Charge
VCE = 300V I C = 50A I G = 10mA
Switching Time - nanosecond
300
250
200
VG E - Volts
I C = 100A 50A 25A 55 65 75 85 95 105 115 125
R G = 3.3 VGE = 15V VCE = 400V
td(off) tfi - - - - - -
I C = 25A 50A 100A
12
9
6
150
100
3
50 25 35 45
0 0 20 40 60 80 100 120 140 160 180
TJ - Degrees Centigrade Fig. 15. Capacitance
10000 f = 1 MHz C ies 1000 C oes
Q G - nanoCoulombs
Capacitance - p F
100 C res
10 0 5 10 15 20 25 30 35 40
V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance
0.275 0.25 0.225
R (th) J C - (C/W)
0.2 0.175 0.15 0.125 0.1 0.075 0.05 1 10
Pulse Width - milliseconds
100
1000
(c) 2003 IXYS All rights reserved
IXGK 60N60B2D1 IXGX 60N60B2D1
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4000 nC
TVJ= 100C VR = 300V
80 A
TVJ= 100C VR = 300V
TVJ= 25C TVJ=100C
3000 Qr 2000
IF=120A IF= 60A IF= 30A
60 IRM 40
TVJ=150C
1000 20
IF=120A IF= 60A IF= 30A
Fig. 17. Forward current IF versus VF
Fig. 18. Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 19. Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
IRM
100 0.5
IF=120A IF= 60A IF= 30A
tfr
10
VFR
1.2
0.8
Qr
5 90 80 0
0.4
0.0
TVJ= 100C IF = 60A
0 200 400
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
Fig. 20. Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 21. Recovery time trr versus -diF/dt
Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399
0.001
0.0001 0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s t
1
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.

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