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| STTH1R02 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1.5 A 200 V 175 C 0.7 V 15 ns A K Features and benefits A K DO-41 STTH1R02 Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature A Description The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-41 and SMA, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. K SMA STTH1R02A Order codes Part Number STTH1R02 STTH1R02RL STTH1R02A Marking STTH1R02 STTH1R02 R1A May 2006 Rev 1 www.st.com 1/8 Characteristics STTH1R02 1 Table 1. Symbol VRRM IFRM Characteristics Absolute ratings (limiting values at Tj = 25 C, unless otherwise specified) Parameter Repetitive peak reverse voltage DO-41 Repetitive peak forward current SMA DO-41 IF(RMS) RMS forward current SMA Average forward current, = 0.5 Surge non repetitive forward current Storage temperature range DO-41(1) Tj Maximum operating junction temperature SMA 150 DO-41 SMA Tlead = 110 C Tc = 110 C 60 -65 to + 175 175 C A C 1.5 A 50 A (1) Value 200 tp = 5 s, F = 5 kHz 30 Unit V A IF(AV) IFSM Tstg tp = 10 ms Sinusoidal 1. On infinite heatsink with 10 mm lead length Table 2. Symbol Thermal parameters Parameter Junction to lead Lead Length = 10 mm on infinite heatsink DO-41 SMA Value 45 C/W Junction to case 30 Unit Rth(j-c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM IF = 4.5 A 0.89 IF = 1.5 A 0.76 0.70 Min. Typ Max. 3 A 2 20 1.2 1 V 0.85 0.80 Unit VF(2) Forward voltage drop Tj = 25 C Tj = 100 C Tj = 150 C 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.08 IF2(RMS) 2/8 STTH1R02 Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C Min. Typ 23 15 3 50 2.1 Max. 30 ns 20 4 A ns V Unit trr Reverse recovery time IRM tfr VFP Reverse recovery current Forward recovery time Forward recovery voltage IF = 1.5 A, dIF/dt = -200 A/s, VR = 160 V, Tj = 125 C IF = 1.5 A, dIF/dt = 100 A/s VFR = 1.1 x VFmax, Tj = 25 C IF = 1.5 A, dIF/dt = 100 A/s, Tj = 25 C Figure 1. IM(A) 50 Peak current versus duty cycle Figure 2. IFM(A) 50 Forward voltage drop versus forward current (typical values) T 45 40 35 30 25 20 P=2W P=5W IM d=tp/T tp 40 30 20 Tj=150C P=1W 15 10 5 0 0.0 10 Tj=25C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VFM(V) 0.0 0.5 1.0 1.5 2.0 2.5 Figure 3. Forward voltage drop versus forward current (maximum values) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (SMA) IFM(A) 50 1.0 0.9 Zth(j-a) /Rth(j-a) SMA Scu=1cm 40 0.8 0.7 30 0.6 0.5 20 Tj=150C Tj=25C 0.4 0.3 0.2 Single pulse 10 VFM(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 tP(s) 1.E+02 1.E+03 3/8 Characteristics STTH1R02 Figure 5. Relative variation of thermal Figure 6. impedance junction to case versus pulse duration (DO-41) C(pF) 100 Junction capacitance versus reverse applied voltage (typical values) F=1MHz Vosc=30mVRMS Tj=25C Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Single pulse DO-41 Lleads=10mm 10 tP(s) VR(V) 1 1 10 100 1000 Figure 7. QRR(nC) 80 70 60 50 40 30 20 10 0 10 Reverse recovery charges versus dIF/dt (typical values) Figure 8. tRR(ns) 80 Reverse recovery time versus dIF/dt (typical values) IF=1.5A VR=160V IF=1.5A VR=160V 70 60 50 40 Tj=125C Tj=125C 30 20 Tj=25C Tj=25C 10 dIF/dt(A/s) 0 dIF/dt(A/s) 10 100 1000 100 1000 Figure 9. Peak reverse recovery curent versus dIF/dt (typical values) Figure 10. Dynamic parameters versus junction temperature QRR; IRM [T j] / Q RR; IRM [T j=125C] 1.4 IF=1.5A VR=160V IRM(A) 8 7 6 5 IF=1.5A VR=160V 1.2 1.0 0.8 IRM 4 0.6 3 2 1 0 10 100 Tj=25C Tj=125C QRR 0.4 0.2 dIF/dt(A/s) Tj(C) 0.0 25 50 75 100 125 150 1000 4/8 STTH1R02 Ordering information scheme Figure 11. Thermal resistance, junction to ambient, versus copper surface under each lead - SMA (Epoxy FR4, ecu = 35 m) Rth(j-a) (C/W) 120 Figure 12. Thermal resistance, junction to ambient, versus copper surface under each lead - DO-41 (Epoxy FR4, ecu = 35 m) Rth(j-a) (C/W) 100 90 100 80 70 SMA 80 60 50 40 DO-15 60 40 30 20 SCU(cm) 20 10 0 5 SCU(cm) 0 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 Ordering information scheme STTH Ultrafast switching diode Average forward current 1=1A Model R Repetitive peak reverse voltage 02 = 200 V Package Blank = DO-41 in Ammopack RL = DO-41 in Tape and reel A = SMA in Tape and reel 1R 02 XX 5/8 Package information STTH1R02 3 Package information Epoxy meets UL94, V0 Table 5. DO-41 Dimensions DIMENSIONS REF. Millimeters Min. Max. Inches Min. Max. OD OB A B C A C 4.1 2 25.4 0.712 5.20 2.71 0.863 0.160 0.080 1 0.028 0.205 0.107 0.034 C D Table 6. SMA dimensions DIMENSIONS REF. Millimeters Min. A1 A2 b c E E1 D L 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 Max. 2.03 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.080 0.008 0.065 0.016 0.220 0.181 0.116 0.063 Figure 13. SMA footprint (dimensions in mm) 1.73 1.48 1.73 1.67 4.94 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH1R02 Ordering information 4 Ordering information Part Number STTH1R02 STTH1R02RL STTH1R02A Marking STTH1R02 STTH1R02 R1A Package DO-41 DO-41 SMA Weight 0.34 g 0.34 g 0.068 g Base qty 2000 5000 5000 Delivery mode Ammopack Tape and reel Tape and reel 5 Revision history Date 03-May-2006 Revision 1 First issue Description of Changes 7/8 STTH1R02 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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