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| VUB 72 Three Phase Rectifier Bridge with Brake Chopper VRRM = 1200/1600 V IdAVM = 110 A 12 45 D1 D3 D5 NTC D T D2 D4 D6 67 Features Maximum Ratings 1200 1600 40 110 530 100 V V A A A W 9 10 Input Rectifier D1 - D6 Symbol VRRM IFAV IDAVM IFSM Ptot Symbol Conditions VUB 72 -12 NO1 VUB 72 -16 NO1 TC = 80C; sine 180 TC = 80C; rectangular; d = 1/3; bridge TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions * three phase mains rectifier * brake chopper: - IGBT with low saturation voltage - HiPerFREDTM free wheeling diode * module package: - high level of integration - solder terminals for PCB mounting - UL registered E72873 - isolated DCB ceramic base plate - large creepage and strike distances - high reliability Applications drives with * mains input * DC link * inverter or chopper feeding the machine * motor and generator/brake operation Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. TVJ = 25C TVJ = 125C 1.0 0.9 0.4 1.1 0.02 V V mA mA VF IR RthJC RthJH IF = 25 A; VR = VRRM; TVJ = 25C VR = 0.8 * VRRM; TVJ = 125C per diode with heat transfer paste 1.2 K/W 1.42 K/W Chopper Diode D Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC RthJH Conditions TVJ = 25C to 150C DC; TC = 25C DC; TC = 80C Conditions IF = 25 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C Maximum Ratings 1200 25 15 V A A Characteristic Values min. typ. max. 2.7 2.0 0.1 16 130 3.1 0.1 V V mA mA A ns 2.3 K/W 3.12 K/W IF = 15A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V with heat transfer paste IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-4 340 VUB 72 Chopper Transistor T Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) DC; TC = 25C DC; TC = 80C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA; L = 100 H VGE = 15 V; VCE = 900 V; TVJ = 125C RG = 39 ; non repetitive Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 50 35 50 VCES 10 s V V A A A Equivalent Circuits for Simulation Conduction D1 - D6 Diode (typ. at TJ = 125C) V0 = 0.85 V; R0 = 7 m T/D IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.0 V; R0 = 45 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.25 V; R0 = 32 m Symbol Conditions (TVJ = 25C, unless otherwise specified) VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 25 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Characteristic Values min. typ. max. 1.9 2.1 4.5 0.1 200 80 50 440 50 3.8 2.0 2.0 150 2.4 6.5 0.1 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W 1.2 K/W Dimensions in mm (1 mm = 0.0394") Inductive load, TVJ = 125C VCE = 600 V; IC = 25 A VGE = 15 V; RG = 39 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 35 A with heat transfer paste, see mounting instructions Temperature Sensor NTC Symbol R25 B25/100 Module Symbol IRMS TVJ Tstg VISOL Md Symbol dA, dS Weight (c) 2003 IXYS All rights reserved IISOL 1 mA; 50/60 Hz; t = 1 min Mounting torque (M5) Conditions Conditions per pin Maximum Ratings 100 -40...+150 -40...+125 3600 2 - 2.5 A C C V~ Nm Conditions T = 25C R(T) = R25 * e B25/100 Characteristic Values typ. (1 T 1 298K ) 2.2 100 k K Characteristic Values min. typ. max. 5 35 mm 340 g 2-4 VUB 72 Input Rectifier D1-D6 80 500 A 70 typ. 60 IF 50 40 max. 30 20 10 0 0.0 TVJ= 25C TVJ=150C IFSM A 400 VR= 0.8VRRM 300 TVJ= 45C 200 100 TVJ= 150C 0.5 1.0 VF 1.5 V 2.0 0 0.001 0.01 t 0.1 s 1 Fig. 1 Forward current versus voltage drop per rectifier diode 80 Fig. 2 Surge overload current per rectifier diode 10000 VR= 0 V A 70 A2s 60 Id(AV)M 50 I2t 40 30 20 10 0 0 40 80 10 100 1000 TVJ= 45C TVJ= 150C TH 120 C 160 1 t ms 10 Fig. 3 Maximum forward current versus heatsink temperature (Rectifier bridge) 140 W 120 100 Ptot 80 60 40 20 0 0 10 20 30 Id(AV)M 40 50 60 A 0 70 40 TA 80 120 C 160 Fig. 4 I2t versus time per rectifier diode RthHA [K/W] 0.5 1 1.5 2 3 4 6 Note: transient thermal impedance see next page (c) 2003 IXYS All rights reserved 3-4 340 Fig. 5 Power dissipation versus direct output current and ambient temperature (Rectifier bridge) VUB 72 Chopper T - D 120 A VGE = 15 V TVJ = 25C TVJ = 125C 50 A IF 40 TVJ = 125C 100 IC 80 60 30 20 40 20 0 0 1 2 3 4 VCE 10 0 TVJ = 25C 5 6V7 0 1 2 VF 3 V 4 Fig. 6 Typ. IGBT output characteristics Fig. 7 Typ. forward characteristics of free wheeling diode 1200 ns 1000 800 600 t Eoff 6 mJ Eoff VCE = 600 V VGE = 15 V RG = 39 TVJ = 125C 4 mJ Eoff 3 4 VCE = 600 V VGE = 15 V IC = 35 A TVJ = 125C 800 ns 600 t Eoff 2 td(off) 400 2 td(off) 400 1 200 tf tf 20 30 40 50 60 RG 200 0 0 20 40 IC 0 A 80 0 60 10 0 70 80 Fig. 8 Typ. IGBT turn off energy and switching times versus collector current Fig. 9 Typ. IGBT turn off energy and switching times versus gate resistor 10 K/W 1 ZthJC 0.1 0.01 0.001 single pulse chopper diode rectifier diode IGBT Temperature Sensor NTC 2300 2200 R 2100 2000 1900 0.001 0.01 0.1 1 0.0001 0.00001 0.0001 s 10 0 25 50 75 100 T 125 C 150 t Fig. 10 Typ. transient thermal impedance (c) 2003 IXYS All rights reserved 4-4 340 Fig. 11 Typ. thermistorresistance versus temperature |
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