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| WSA753 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER Low Speed Switching Complement to WSC752 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse)* Base Current Collector Power Dissipation(Tc=25) Collector Power Dissipation(Ta=25) Junction Temperature Storage Temperature *PW 10ms,Duty Cycle 50% (Ta=25) Symbol VCBO VCEO VEBO IC Ic IB PC PC Tj Tstg Value -40 -30 -5 -2 -7 -0.6 15 1.2 150 -55~ +150 Unit V V V A A A W W 1. Base 2. Collector 3. Emitter 3 1 2 ELECTRICAL CHARACTERISTICS Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO #hFE (Ta=25, unless otherwise specified) Test Condition Ic=-100 ,IE=0 Ic=-10mA, IB=0 Ic=-1mA ,IC=0 VCB=-40V ,IE=0 VEB=-5V ,IC=0 VCE=-2V, IC=-500mA Min TYP MAX Unit -40 -30 -5 -0.1 -0.1 100 -0.5 400 -0.8 -2 V MHZ pF V V V VCE(sat)(1) IC=-2.0A, IB=-200 VCE(sat)(2) IC=-1.5A, IB=-30 Current Gain Bandwith Product Output Capacitance * Pulse test:PW 350us,Duty cycle 2% # hFE Classification: Classification hFE O 100~200 Y 160~320 fT Cob VCE=-5V,IC=-500mA VCB=-10V ,IE=0 f=1MHZ 120 13 G 200~400 JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 1 WSA753 Static Characteristics 2.2 2.0 1000 DC Current Gain VCE=-2V 300 hFE ,DC Current Gain 1.6 1.2 0.8 IB=-10mA IB=-8mA IB=-6mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA -4 -8 -12 -16 Ic, Collector Current, A VBE(sat) VCE(sat),Saturation Voltage,V Pc(W),Power Dissipation 100 30 10 0.4 0 -1 -10 -100 -1000 -10000 Vce,Collector-Emitter Voltage ,V IC,Collector Current,mA Base Emitter Saturation Voltage Collector Emitter Saturation Voltage IC=10IB 1000 Current Gain-Bandwidth Product VCE=-5V Current Gain Bandwidth Product,fT(MHZ) - 300 100 50 30 10 -1000 VBE(sat) -100 -10 VCE(sat) 1 -1 -10 -100 -1000 -0.01 -0.1 -1 IC,Collector Current,mA IC,Collector Current,A -10 Power Derating 16 14 12 8 Safe Operating Area Ic Max(Pulse) 100uS 1mS -3 10mS Ic Max(DC) -1 Ic(A)Collector Current -0.3 -0.1 4 50 100 150 200 250 -0.01 -1 -3 -10 -30 -100 -300 -1000 Tc(), Case Temperature VCE(V),Collector Emitter Voltage JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2 |
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