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APT1001RBVFR APT1001RSVFR
1000V 11A
1.00
POWER MOS V
(R)
FREDFET
BVFR D3PAK
TO-247
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SVFR
* Avalanche Energy Rated * Faster Switching
3
* Lower Leakage * FAST RECOVERY BODY DIODE
G
D
*TO-247 or Surface Mount D PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
S
All Ratings: TC = 25C unless otherwise specified.
APT1001RBVFR_SVFR UNIT Volts Amps
1000 11 44 30 40 278 2.22 -55 to 150 300 11 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 1.00 250 1000 100 2 4
(VGS = 10V, ID = 5.5A)
Ohms A nA Volts
5-2004 050-5596 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT1001RBVFR_SVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 11A @ 25C VGS = 15V VDD = 500V ID = 11A @ 25C RG = 1.6 MIN TYP MAX UNIT
3050 280 135 150 16 70 12 11 55 12
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
11 44 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -11A)
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -11A, di/dt = 100A/s) Reverse Recovery Charge (IS = -11A, di/dt = 100A/s) Peak Recovery Current (IS = -11A, di/dt = 100A/s)
200 350 0.7 1.5 11 16
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.45 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting T = +25C, L = 20.0mH, R = 25, Peak I = 11A j G L 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID11A di/dt 700A/s VR 1000V TJ 150C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5 D=0.5
, THERMAL IMPEDANCE (C/W)
0.1 0.05
0.2 0.1 0.05 0.02 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
5-2004
0.01 0.005
0.01 SINGLE PULSE
050-5596 Rev C
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
10
Typical Performance Curves
20 VGS=6V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
20
APT1001RBVFR_SVFR
VGS=15V VGS=6V & 10V 5V
ID, DRAIN CURRENT (AMPERES)
16
16
12 4.5V 8
12 4.5V
8
4 4V 0 3.5V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
4 4V 0 3.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
40
1.5
V
GS
ID, DRAIN CURRENT (AMPERES)
30
TJ = +125C
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.4
20
1.2
VGS=10V VGS=20V
10
TJ = +125C TJ = -55C
1.0
2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 10 8 6 4 2 0
0
TJ = +25C 0
0.8
0
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
0.90
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
2.5
I
D
1.2
= 0.5 I V
GS D
[Cont.]
= 10V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-5596 Rev C
5-2004
APT1001RBVFR_SVFR
50
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
C, CAPACITANCE (pF)
11,000 5,000
Ciss
10 5 1mS
1,000 500 Coss Crss
1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I =I
D D
10mS 100mS DC
100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
.1
50
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
[Cont.]
50
16
VDS=100V VDS=200V
10 5
TJ =+150C =+25C
TJ
12
VDS=500V
8
1 .5
4
50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 Package Outline (BVFR)
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline (SVFR)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
13.79 (.543) 13.99 (.551)
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
2.40 (.094) 2.70 (.106)
5-2004
(Base of Lead)
1.01 (.040) 1.40 (.055)
050-5596 Rev C
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Source Drain Gate Dimensions in Millimeters (Inches)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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