View APT12031JFLL_644220.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT12031JFLL
1200V 30A 0.310
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT12031JLL UNIT Volts Amps
1200 30 120 30 40 690 5.52 -55 to 150 300 30 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 0.310 250 1000 100 3 5
(VGS = 10V, 15A)
Ohms A nA Volts
5-2003 050-7081 Rev B
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT12031JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 30A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 30A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 800V, VGS = 15V ID = 30A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 800V VGS = 15V ID = 30A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
9480 1460 250 365 45 235 23 16 79 30 1760 1241 3035 1557
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
30 120 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -30A)
5
dv/
t rr
Reverse Recovery Time (IS = -30A, di/dt = 100A/s) Reverse Recovery Charge (IS = -30A, di/dt = 100A/s) Peak Recovery Current (IS = -30A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
300 600 1.8 7.4 16 30
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 8.0mH, RG = 25, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID30A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
5-2003
050-7081 Rev B
Z
JC
SINGLE PULSE 1.0
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
80 VGS =15 & 10V
RC MODEL Junction temp C 0.0375 Power (watts) 0.142 Case temperature C 0.751F 0.0554F
APT12031JFLL
6.5V 6V
ID, DRAIN CURRENT (AMPERES)
70 60 50 40 30 20 10 0
5.5V
5V
4.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
NORMALIZED TO = 10V @ 15A V
GS
ID, DRAIN CURRENT (AMPERES)
1.30 1.20
60
40
TJ = -55C TJ = +125C
1.10
VGS=10V VGS=20V
1.00
20
TJ = +25C
0.90 0.80
0
0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
35 30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95 0.90 0.85 -50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 15A = 10V
GS
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
1.1
1.0 0.9 0.8
1.5
1.0
0.5
0.7 0.6 -50
050-7081 Rev B
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5-2003
APT12031JFLL
121
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000 Ciss
100S
C, CAPACITANCE (pF)
10,000
10 1mS
1,000
Coss
TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
10mS 100
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 300
1
= 30A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
100 TJ =+150C TJ =+25C
12 VDS= 120V 8 VDS= 600V VDS= 960V
10
4
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 400 350 300
td(on) and td(off) (ns)
V R = 5
0 0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80
V
DD G
= 800V
td(off)
70 60
R
= 5
T = 125C
J
L = 100H
tf
G
200 150 100 50 0 10
T = 125C
J
tr and tf (ns)
250
DD
= 800V
50 40 30 20 tr
L = 100H
td(on) 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0 10
20
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 6000
20
5000
= 800V R = 5
L = 100H EON includes diode reverse recovery.
SWITCHING ENERGY (J)
4500
SWITCHING ENERGY (J)
T = 125C
J
Eon
5000 4000 Eon 3000 2000 1000 0
V I
Eoff
3000
2000
5-2003
DD
= 800V
D J
= 30A
1000
Eoff
T = 125C L = 100H E ON includes diode reverse recovery.
050-7081 Rev B
30 35 40 45 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
15
20
25
5 10 15 20 25 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
Typical Performance Curves
Gate Voltage
APT12031JFLL
10 % T = 125 C J td(on) tr 90% 5% 5%
Drain Voltage Drain Current
90%
Gate Voltage T = 125 C J
t
d(off)
Drain Voltage
10 %
90% 10%
Switching Energy
Drain Current
Switching Energy
t f
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7081 Rev B
5-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

▲Up To Search▲

Price & Availability of APT12031JFLL

	To Download APT12031JFLL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .