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400V 23A 0.20 APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V (R) V(R) FREDFET BVFR TO -2 47 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. D3PAK SVFR * Faster Switching * Lower Leakage * Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Avalanche Energy Rated * TO-247 or Surface Mount D3Pak G D S All Ratings: TC = 25C unless otherwise specified. APT4020B_SVFR(G) UNIT Volts Amps 400 23 92 30 40 250 2 -55 to 150 300 23 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 960 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 23 0.20 25 250 2 4 100 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 11.5A) Ohms A 3-2006 050-5635 Rev B Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) APT Website - http://www.advancedpower.com nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT4020B_SVFR(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 23A @ 25C VGS = 15V VDD = 200V ID = 23A @ 25C RG = 1.6 MIN TYP MAX UNIT pF 2650 400 180 120 16 60 10 11 38 7 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts V/ns ns 23 92 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = -23A) 5 Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -23A, di/dt = 100A/s) Reverse Recovery Charge (IS = -23A, di/dt = 100A/s) Peak Recovery Current (IS = -23A, di/dt = 100A/s) t rr Q rr IRRM ? ? ? ? ? ? C Amps THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.50 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.63mH, R = 25, Peak I = 23A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 050-5635 Rev B 3-2006 Z JC 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Typical Performance Curves 50 VGS=7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) APT4020B_SVFR(G) 50 VGS=15V 6.5V 40 VGS=10V 7V 6.5V 30 6V 40 30 6V 20 5.5V 20 5.5V 10 5V 4.5V 10 5V 4.5V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4 V GS 0 50 ID, DRAIN CURRENT (AMPERES) TJ = -55C TJ = +25C TJ = +125C NORMALIZED TO = 10V @ 0.5 I [Cont.] D 40 1.3 30 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.2 VGS=10V 20 1.1 10 TJ = +125C 0 TJ = +25C TJ = -55C 1.0 VGS=20V 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES) 0.9 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 20 1.10 15 1.05 10 1.00 5 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.90 -50 2.5 I = 0.5 I [Cont.] D D VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) V GS = 10V 2.0 1.1 1.0 0.9 0.8 0.7 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.6 -50 050-5635 Rev B 3-2006 APT4020B_SVFR(G) 100 ID, DRAIN CURRENT (AMPERES) 10S OPERATION HERE LIMITED BY RDS (ON) 10,000 5,000 C, CAPACITANCE (pF) 50 100S Ciss 10 5 1mS 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC 1,000 500 Coss Crss 100 .1 1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 100 50 TJ =+150C TJ =+25C 16 VDS=80V VDS=200V 12 VDS=320V 8 10 5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 1 TO-247 (BVFR) Package Outline e1 SAC: Tin, Silver, Copper D PAK (SVFR) Package Outline e3 100% Sn 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3-2006 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Gate Drain Source Heat Sink (Drain) and Leads are Plated 050-5635 Rev B 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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