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| 600V 16A 0.40 APT6040BVFR *G APT6040SVFR APT6040BVFRG*APT6040SVFRG* Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V(R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. BVFR D3PAK TO-247 SVFR * Faster Switching * Lower Leakage * Avalanche Energy Rated * FAST RECOVERY BODY DIODE G S D * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT6040B_SVFR(G) UNIT Volts Amps 600 16 64 30 40 250 2.0 -55 to 150 300 16 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 960 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.400 250 1000 100 2 4 (VGS = 10V, ID = 8A) Ohms A nA Volts 3-2006 050-7270 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT6040B_SVFR(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 16A @ 25C VGS = 15V VDD = 300V ID = 16A @ 25C RG = 1.6 MIN TYP MAX UNIT 2600 305 125 115 15 52 10 9 38 6 3120 425 180 170 25 75 20 18 50 12 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns C Amps 16 64 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = -16A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -16A, di/dt = 100A/s) Reverse Recovery Charge (IS = -16A, di/dt = 100A/s) Peak Recovery Current (IS = -16A, di/dt = 100A/s) 250 500 1.9 6 15 26 THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.50 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 7.50mH, RG = 25, Peak IL = 16A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID16A di/dt 700A/s VR 600V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 , THERMAL IMPEDANCE (C/W) 0.1 0.05 0.2 0.1 0.05 0.02 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 3-2006 0.01 0.005 0.01 SINGLE PULSE 050-7270 Rev B Z JC 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 10 Typical Performance Curves 30 ID, DRAIN CURRENT (AMPERES) VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 30 APT6040B_SVFR(G) VGS=15V VGS=7V, 10V 5.5V 6V 24 5.5V 18 5V 24 18 5V 12 12 6 4.5V 4V 6 4.5V 4V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS NORMALIZED TO V = 10V @ 8A GS 30 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.5 1.4 1.3 1.2 1.1 1.0 0.9 24 18 12 TJ = +125C TJ = +25C TJ = -55C VGS=10V VGS=20V 6 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16 0 0 6 12 18 24 30 36 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 12 1.10 1.05 8 1.00 4 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 25 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -50 2.5 V I D = 8A = 10V GS 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 0.6 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -50 -25 050-7270 Rev B 3-2006 100 50 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10,000 10S 100S C, CAPACITANCE (pF) APT6040B_SVFR(G) 5,000 Ciss 10 5 1mS 1,000 Coss 500 Crss 10mS 1 0.5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 0.1 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 50 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 = 8A 50 16 VDS=120V VDS=300V 10 5 TJ =+150C TJ =+25C 12 VDS=480V 8 1 .5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE .1 TO-247 (BVFR) Package Outline e1 SAC: Tin, Silver, Copper D PAK (SVFR) Package Outline e3 100% Sn 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3-2006 0.40 (.016) 0.79 (.031) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) 050-7270 Rev B Gate Drain Source Heat Sink (Drain) and Leads are Plated 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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