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APTM50HM75SCT
Full bridge
Series & SiC parallel diodes
VDSS = 500V RDSon = 75mW max @ Tj = 25C ID = 46A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies
Q3
MOSFET Power Module
VBUS CR1A CR3A
Q1
CR1B
CR3B
G1 S1 CR2A OUT1 OUT2 CR4A
G3 S3
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Q2
CR2B
CR4B
Q4
G2 S2 NTC1 0/VBUS NTC2
G4 S4
* * * *
G3 S3 G4 S4 OUT2
Benefits * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Max ratings 500 46 34 184 30 75 357 46 50 2500 Unit V A V mW W A mJ
May, 2004 1-7 APTM50HM75SCT - Rev 1
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
APT website - http://www.advancedpower.com
APTM50HM75SCT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Tj = 25C Tj = 125C
Min 500
Typ
Max 100 500 75 5 100
Unit V A mW V nA
VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 46A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 46A RG = 5W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 46A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 46A, RG = 5 Min Typ 5590 1180 85 123 33 65 18 35 87 77 453 726 745 846 J J ns Max Unit pF
nC
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s IF = 30A VR = 133V di/dt = 200A/s Min Tc = 85C Typ 30 1.1 1.4 0.9 24 48 33 150 Max 1.15 V
May, 2004 2-7 APTM50HM75SCT - Rev 1
Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APT website - http://www.advancedpower.com
APTM50HM75SCT
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions
50% duty cycle
Min Tc = 125C Tj = 25C Tj = 175C
IF = 20A
Typ 20 1.6 2.0 28 130 100
Max 1.8 2.4
Unit A V nC pF
IF = 20A, VR = 300V di/dt =800A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode 2500 -40 -40 -40
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.35 1.2 1.5 150 125 100 4.7 160 Typ 68 4080 Max Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
V C N.m g Unit kW K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = R 25 e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e
Min
Package outline
APT website - http://www.advancedpower.com
3-7
APTM50HM75SCT - Rev 1
May, 2004
APTM50HM75SCT
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Low Voltage Output Characteristics 180 160 ID, Drain Current (A) 140 120 100 80 60 40 20 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 23A
Transfert Characteristics
120
VGS=10&15V ID, Drain Current (A) 8V 7.5V 7V 6.5V 6V 5.5V
100 80 60 40 20 0
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
TJ=25C TJ=125C TJ=-55C
25
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 50 40 30 20 10 0
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
VGS=10V
VGS=20V
20
40
60
80
100
25
APT website - http://www.advancedpower.com
4-7
APTM50HM75SCT - Rev 1
May, 2004
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APTM50HM75SCT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 VGS, Gate to Source Voltage (V) C, Capacitance (pF) Ciss Coss 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=23A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
100
limited by RDSon
100s
10 1ms 10ms Single pulse TJ=150C 1 100ms
1
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
10000
Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=46A 12 T =25C J V =250V
CE
10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC)
May, 2004
VCE=400V
1000
100
Crss
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
5-7
APTM50HM75SCT - Rev 1
APTM50HM75SCT
Delay Times vs Current 100 80 60 40 20 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 0.8 0.4 0 10 20 30 40 50 60 70 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A)
VDS=333V D=50% RG=5 TJ=125C VDS=333V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 120 100 tr and tf (ns) 80 60 40 20 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 4 Switching Energy (mJ) 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon
VDS=333V ID=46A TJ=125C L=100H VDS=333V RG=5 TJ=125C L=100H
td(off)
td(on) and td(off) (ns)
tf
td(on)
tr
VDS=333V RG=5 TJ=125C L=100H
Eoff
Eoff
Eon
IDR, Reverse Drain Current (A)
400
1000
100
TJ=150C
10 TJ=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
May, 2004
APT website - http://www.advancedpower.com
6-7
APTM50HM75SCT - Rev 1
APTM50HM75SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 400 IR Reverse Current (A) 350 300 250 200 150 100 50 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25C TJ=125C TJ=75C TJ=175C
40
IF Forward Current (A)
35 30 25 20 15 10 5 0 0 0.5 1
TJ=25C
TJ=75C
TJ=175C
TJ=125C
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 700 C, Capacitance (pF) 600 500 400 300 200 100 0 1
May, 2004 7-7 APTM50HM75SCT - Rev 1
10 100 VR Reverse Voltage
1000
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com

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