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| PROCESS Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip CP324 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 35,900 PRINCIPAL DEVICE TYPES 2N7002 EPITAXIAL PLANAR 21.65 x 21.65 MILS 9.0 MILS 5.5 x 5.5 MILS 5.9 x 13.8 MILS Al - 30,000A Au - 12,000A BACKSIDE DRAIN 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CP324 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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