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| PROCESS Fast Recovery Rectifier CPD26 Central TM 8 Amp Glass Passivated Rectifier Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 98 x 98 MILS 10.6 MILS 82.5 x 82.5 MILS Au - 5,000A Au - 2,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,170 PRINCIPAL DEVICE TYPES CR6AF1GPP Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CPD26 Semiconductor Corp. Typical Electrical Characteristics The Typical Electrical Characteristics data for this chip is currently being revised. For the latest updated data for this Chip Process, please visit our website at: www.centralsemi.com/chip 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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