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| Fast Recovery Epitaxial Diode (FRED) DSEI 120 IFAVM = 109 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type A C TO-247 AD C DSEI 120-12A A C A = Anode, C = Cathode Symbol IFRMS IFAVM yyx IFAV y IFRM IFSM Test Conditions TVJ = TVJM TC = 60C; rectangular, d = 0.5 TC = 95C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 100 109 75 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 A A A A A A A A A2s A2s A2s A2s C C C W Features q q q q q q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque q q q 357 0.8...1.2 6 q Nm g q q q Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Symbol Test Conditions Characteristic Values typ. max. Advantages IR TVJ = 25C TVJ = 25C TVJ = 125C IF = 70 A; VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C 3 1.5 20 1.55 1.8 1.2 4.6 0.35 0.25 35 IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 75 A; -diF/dt = 200 A/ms L 0.05 mH; TVJ = 100C 40 25 60 30 mA mA mA V V V mW K/W K/W K/W ns A q q VF VT0 rT RthJC RthCK RthJA trr IRM q q q For power-loss calculations only TVJ = TVJM High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 on page D5 - 27 x Chip capability, y limited to 70 A by leads Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 009 (c) 2000 IXYS All rights reserved 1-2 DSEI 120, 1200 V 150 A 125 IF 100 TVJ=150C 16 T = 100C VJ C V = 600V 14 R Qr 12 10 8 TVJ=100C IF=140A IF= 70A IF= 35A 120 TVJ= 100C A VR = 600V 100 IRM 80 60 40 20 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt IF=140A IF= 70A IF= 35A 75 50 TVJ= 25C 6 4 2 0 100 25 0 0.0 0.5 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 ns 450 trr 400 TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 tfr VFR TVJ= 100C IF = 100A 1.4 1.5 s tfr 1.0 1.2 Kf 1.0 IRM 350 300 0.8 IF=140A IF= 70A IF= 35A 30 20 10 0 0.0 1000 A/ms 0.5 0.6 Qr 250 200 0 40 80 120 C 160 TVJ 0 200 400 600 A/ms 1000 800 -diF/dt 0.4 0 200 400 600 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.017 0.0184 0.1296 0.185 ti (s) 0.00038 0.0026 0.0387 0.274 D=0.7 0.5 ZthJC 0.1 0.3 0.2 0.01 0.05 Single Pulse 1 2 3 4 0.01 0.001 DSEI 120-12 0.01 0.1 1s 10 t Fig. 7 Transient thermal resistance junction to case (c) 2000 IXYS All rights reserved 2-2 This datasheet has been download from: www..com Datasheets for electronics components. |
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