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Advance Technical Information HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque PLUS 247 TO-264 Test Conditions TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFK 44N55Q IXFX 44N55Q VDSS ID25 RDS(on) = = = 550 V 44 A 120 m trr 250 ns PLUS 247TM (IXFX) Maximum Ratings G (TAB) D 550 550 20 30 44 176 44 60 2.5 10 500 -55 ... +150 150 -55 ... +150 300 0.4/6 6 10 V V V V A A A mJ J V/ns W C C C C Nm/lb.in. g g G = Gate S = Source TO-264 AA (IXFK) G D S (TAB) D = Drain TAB = Drain Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l Symbol Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 550 2.5 V 4.5 V 100 nA 100 A 2 mA 120 m VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 125C (c) 2002 IXYS All rights reserved 98918 (04/02) IXFK 44N55Q IXFX 44N55Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 30 45 6400 VGS = 0 V, VDS = 25 V, f = 1 MHz 850 180 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External), 20 75 10 190 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 86 0.26 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Dim. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 44 176 1.5 250 A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline IF = 25A,-di/dt = 100 A/s, VR = 100 V 1.0 8 Dim. Note: 1. Pulse test, t 300 s, duty cycle d 2 % Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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