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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 102N30P
VDSS = 300 V ID25 = 102 A RDS(on) 33 m
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
Maximum Ratings 300 300 20 30 102 75 250 60 60 2.5 10 700 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C
TO-264 (IXTK)
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
l l
l
International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-264
300 C 260 C 1.13/10 Nm/lb.in. 10 g
Advantages
l l l
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 200 25 250 33 V V nA A A m
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99130E(12/05)
IXTK 102N30P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 45 57 7500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 230 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 28 130 30 224 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 110 S pF pF pF ns ns ns ns nC nC nC 0.18 C/W 0.15 C/W TO-264 (IXTK) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 102 250 1.5 250 3.3 A A V ns C
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXTK 102N30P
Fig. 1. Output Characte ris tics @ 25C
110 100 90 80 V GS = 10V 9V 8V 250 225 200 175 V GS = 10V 9V
Fig. 2. Exte nde d Output Characte r is tics @ 25C
ID - Amperes
ID - Amperes
70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5V 6V 7V
8V 7V
150 125 100 75 50 25 0 6V
5V 0 2 4 6 8 10 12 14 16 18 20
V DS - V olts Fig. 3. Output Characte ris tics @ 125C
110 100 90 80 V GS = 10V 9V 8V 7V 2.8 2.6 2.4
V DS - V olts
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e
V GS = 10V
RDS(on) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 I D = 102A I D = 51A
ID - Amperes
70 60 50 40 30 20 10 0 0 1 2 3 4 5
6V
5V 6 7 8 9
0.6 0.4 -50 -25 0 25 50 75 100 125 150
V DS - V olts Fig. 5. RDS(on) Nor m alize d to
2.6 2.4 2.2
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs . Cas e Te m pe rature
90 80 70
0.5 ID25 V alue vs . ID
V GS = 10V
External Lead Current Limit
RDS(on) - Normalized
ID - Amperes
TJ = 25C
2 1.8 1.6 1.4 1.2 1 0.8 0 25 50
TJ = 125C
60 50 40 30 20 10 0
75
ID - A mperes
100 125 150 175 200 225 250
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2006 IXYS All rights reserved
IXTK 102N30P
Fig. 7. Input Adm ittance
150 100 90 125 100 80 70 TJ = -40C 25C 125C
Fig. 8. Trans conductance
gfs - Siemens
5.5 6 6.5 7 7.5
ID - Amperes
60 50 40 30 20 10
75
50 25
TJ = 125C 25C -40C
0 3.5 4 4.5 5
0 0 25 50 75 100 125 150 175 200
V GS - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage
300 10 9 250 200 8 7 V DS = 150V I D = 51A I G = 10m A
ID - A mperes Fig. 10. Gate Char ge
IS - Amperes
V G S - Volts
TJ = 125C TJ = 25C
6 5 4 3 2 1
150
100 50
0 0.4 0.6
0
V SD - V olts
0.8
1
1.2
1.4
0
25
50
75
100
125
150
175
200
225
QG - nanoCoulombs Fig. 12. For w ard-Bias Safe Ope rating Are a
1000 C iss R DS(on) Lim it TJ = 150C TC = 25C 25s 100s 1m s 10 10m s
Fig. 11. Capacitance
10000
Capacitance - picoFarads
1000 C oss
ID - Amperes
100
DC
f = 1MH z C rs s 100 0 5 10 15 1 20 25 30 35 40 10 100 1000
V DS - V olts
V DS - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 102N30P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
R(th)JC - C/W
0.10
0.01 1 10 100 1000
Pulse Width - milliseconds
(c) 2006 IXYS All rights reserved

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