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| SIYU R 50---1000V 6.0 A Features .134(3.4) .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4) .382(9.7) .366(9.3) KBJ601 ...... KBJ610 Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 6.0 A * Low reverse leakage * High forward surge capability *170 A Surge overload rating:170 Amperes peak .602(15.3) .578(14.7) .157 (4.0) .134(8.4) .122(3.1) .995(25.3) .983(24.7) .057(1.45) .041(1.05) .083(2.1) .069(1.7) .043(1.1) .035(0.9) + ~ ~ .708(18.0) .669(17.0) Mechanical Data .114(2.8) .098(2.5) *: Case: Molded Plastic *: Polarity: Symbols molded or marked on body *: *: 4.6 Mounting Position: Any Weight:4.6 Grams .074(1.9) .059(1.5) .146(3.7) .130(3.3) .031(0.8) .023(0.6) .303(7.7) .303(7.7) .303(7.7) .287(7.3) .287(7.3) .287(7.3) Unitinchmm TA = 25 Maximum Ratings & Thermal Characteristics Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage TC =111 Maximum average forward rectified current Ta=25 Ratings at 25 ambient temperature unless otherwise specified. KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 V V V A A A /W Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit VRRM VRMS VDC IF(AV) IFSM IR(AV) RJA Tj, TSTG 100 70 100 200 140 200 300 210 300 400 280 400 6.0 2.8 170 30 10 600 420 600 800 560 800 1000 700 1000 8.3ms Peak forward surge current 8.3 ms single half sine-wave @TA = 75 Maximum peak reverse current full cycle Typical thermal resistance Operating junction and storage temperature range -50 --- +150 TA = 25 Electrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. Maximum forward voltage KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 V A Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit IF = 3.0A TA= 25 TA=100 VF 1.0 10 500 40 Maximum reverse current VR = 4.0V, f = 1MHz Type junction capacitance IR Cj pF - 125 - DACHANG ELECTRONICS SIYU R Characteristic Curves TYPICAL FORWARD CHARACTERISTIC 10 KBJ601...... KBJ610 FORWARD CURRENT DERATING CURVE 4.0 IF(AV) (A) IF(A) Average Forward Rectified Current (A) on glass-epoxi substrate IF Instantaneous Forward Current (A) + ~ ~ - Tl=150 3.0 P.C.B. soldering land 5mm sine wave R-load free in air IF(A) 1 Tl=25 2.0 1.0 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 00 40 80 120 160 VF(V) VF Instantaneous Forward Voltage (V) Ta(C) Tamb, ambient temperature (C) FORWARD POWER DISSIPATION MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT 240 IFSM 14 200 10mS 10mS 12 non-repetitive Tj=25 before FORWARD POWER DISSIPATION PF(W)) IFSM Peak Forward Surge Current (A) 1 Cycle 10 8 6 4 2 0 0 IFSM(A) 120 80 P(W) 160 40 Sine wave Tj=150 1 2 3 4 5 6 7 0 0 2 5 10 20 50 100 Number of Cycles at 60 Hz. FORWARD CURRENT DERATING CURVE 10 Tc-sensing point I0(A) AVERAGE RECGIFIED FORWARD CURRENT Io(A) IF(AV) (A) IF(A) Average Forward Rectified Current (A) 9 + ~ ~ - 8 7 6 5 4 3 2 1 00 Tc sine wave R-load with heatsink 40 80 120 160 TC(C) Case Temperature Tc() DACHANG ELECTRONICS - 126 - |
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