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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM P123 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 10 Watts Junction to Case Thermal Resistance 15 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V o -65 o C to 150o C 0.8 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 50 TYP 2WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A, Vds = 12.5 V, F = 850 MHz Idq = 0.2 A, Vds = 12.5 V, F = 850 MHz Idq = 0.2 A, Vds = 12.5 V, F = 850 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 0.2 2 2.3 7.5 1.2 8 MIN 40 0.2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.01 A, Vds = 12.5 V, Vds = 0 V, Ids = 0.02 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids =1.6 A Vgs = 20V, Vds = 10V Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com P123 POUT VS PIN GRAPH P-123 POUT vs PIN F=850 MHZ; IDQ=0.26A; VDS=12.5V 3.5 3 2.5 POUT IN WATTS 2 14 100 CAPACITANCE VS VOLTAGE F2C 1 DIE CAPACITANCE 13 GAIN 12 11 10 Gain in dB 10 1.5 Ciss Coss POUT 1 9 Efficiency = 49.4% 0.5 0 0 0.1 0.2 0.3 0.4 PIN IN WATTS 0.5 8 7 0.6 1 0 5 10 15 VDS IN VOLTS Crss 20 25 30 IV CURVE F2C I DIE IV CURVE 2.5 ID AND GM VS VGS F2C 1 DIE GM & ID vs VGS 10 2 Id 1.5 1 1 0.5 0.1 Gm 0 0 2 4 6 8 Vds in Volts 10 12 14 16 0.01 0 2 4 6 Vgs in Volts 8 10 12 14 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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