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| S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m [ ) Max ID 8A R DS (ON) S uper high dense cell design for low R DS (ON). 16 @ V G S = 4.5V 24 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 8 42 2 1.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 S T G 8207 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 12V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5V, ID = 5A VGS =2.5V, ID = 3A VDS = 5V, ID = 5A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 0.8 12 20 17 1800 400 320 1.5 16 24 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V ID = 1A VGEN = 4.5V R L = 10 ohm R GE N = 10 ohm VDS =10V, ID = 5A VGS =4.5V 58.5 16 110.5 45.8 27 3.8 7.8 ns ns ns ns nC nC nC 2 S T G 8207 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =2A Min Typ Max Unit 0.78 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 V G S =2V 16 20 V G S =10,9,8,7,6,5,4,3V 25 25 C -55 C 15 ID, Drain C urrent(A) 12 ID, Drain C urrent (A) T j=125 C 8 4 0 10 5 0 0.0 0 2 4 6 8 10 12 0.6 1.2 1.8 2.4 3.0 3.6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 3000 1.8 2400 1800 1200 600 C rs s 0 0 2 4 6 8 C os s 10 12 C is s F igure 2. Trans fer C haracteris tics V G S =4.5V ID=5A RDS(ON), On-Resistance (Normalized) C , C apacitance (pF ) 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T G 8207 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 36 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gFS , T rans conductance (S ) 24 18 12 6 0 0 5 10 15 V DS =5V 20 25 Is , S ource-drain current (A) 30 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =10V ID=5A 10 RD S ( ) ON L im it 10 10 0m s ms 11 1s DC 0.1 0.03 VGS =4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 4 8 12 16 20 24 28 32 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T G 8207 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T G 8207 6 S T G 8207 TSSOP-8 Tape and Reel Data TSSOP-8 Carrier Tape UNIT : P PACKAGE TSSOP 8 A0 6.08 B0 4.40 K0 1.60 D0 r1.50 + 0.1 - 0.0 D1 r1.50 + 0.1 - 0.0 E 12.00 O 0.3 E1 1.75 E2 5.50 O 0.05 P0 8.00 P1 4.00 P2 2.00 O0.05 T 0.30 O0.05 TSSOP-8 Reel UNIT : P TAPE SIZE 12 P REEL SIZE r330 M 330 N 100 W 12.5 W1 16.0 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 7 |
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