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| S T M8450 S amHop Microelectronics C orp. Nov.23, 2004 ver1.3 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 40V P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 5A R DS (ON) ( m W ) Max ID -4A R DS (ON) ( m W ) Max 35 @ V G S = 10V 60 @ V G S = 4.5V D1 8 45 @ V G S = -10V 60 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 40 20 5 4.2 20 1.7 2 1.44 -55 to 150 -40 20 -4 -3.4 -16 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8450 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 5A VGS =4.5V, ID= 4A VDS = 5V, VGS = 10V VDS = 5V, ID = 5A Min Typ C Max Unit 40 1 V uA 100 nA 1.0 2.0 25 50 15 8 910 130 95 3 17 4.3 23.5 9.5 18.3 9 3.3 4.2 19 5 27 11 21 10 4 5 995 150 108 3.0 35 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =10V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 3 A VGS = 10V R GE N = 4.7 ohm VDS =24V, ID =5A,VGS =10V VDS =24V, ID =5A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =24V, ID = 5 A VGS =4.5V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8450 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -32V, VGS= 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID= -4A VGS =-4.5V, ID= -3A VDS = -5V, VGS = -10V VDS = -5V, ID= -4A Min Typ C Max Unit -40 -1 V uA 100 nA -0.8 -1.5 35 50 20 8 1128 1250 182 210 110 130 3.5 17.3 7 82 27.6 20.5 9.8 2.8 3.9 20 8 95 32 23 11 3.2 4.5 -2.0 45 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-10V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -15V ID= -2.2A VGS = -10V R GE N = 4.7 ohm VDS =-24V, ID =-4A,VGS =-10V VDS =-24V, ID =-4A,VGS =-4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =-24V, ID = -4 A VGS =-4.5V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8450 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.77 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR4 Board, tO10sec. b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-Channel 5 20 16 25 20 ID, Drain Current(A) 12 ID, Drain Current (A) VGS=10,9,8,7,6,5V VGS=4V 15 Tj=125 C -55 C 8 10 25 C 5 0 4 VGS=3V 0 0 1 2 3 4 5 6 0 0.9 1.8 2.7 3.6 4.5 5.4 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 2.2 1.8 Figure 2. Transfer Characteristics RDS(ON), On-Resistance (Normalized) V G S =10V ID=5A C, Capacitance (pF) 1000 750 500 250 0 0 Crss 5 10 15 20 25 Ciss 1.4 1.0 0.8 0.4 0 -50 Coss 30 -25 0 25 50 75 100 125 150 Tj=( C ) VDS, Drain-to Source Voltage (V) T j, J unction T emperature ( C ) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8450 N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS=V GS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gFS , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS=5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S T M8450 P-C hannel 20 -V G S =10,9,8,7,6,5,4V 16 20 25 25 C -ID, Drain C urrent (A) -ID, Drain C urrent (A) -V G S =3V 12 -55 C 15 8 4 -VGS=2V 0 0 2 4 6 8 10 12 10 T j=125 C 5 0 0 0.7 1.4 2.1 2.8 3.5 4.2 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics 1500 1250 2.2 1.8 C is s V G S =-10V ID=-4A RDS(ON), On-Resistance (Normalized) 30 C , C apacitance (pF ) 1000 750 500 250 0 C rs s 0 5 10 15 20 25 1.4 1.0 0.8 0.4 0 -50 C os s -25 0 25 50 75 100 125 150 Tj=( C ) -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R esistance Var iation with Temper ature 6 S T M8450 P-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS=V GS ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS=-5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8450 N-C hannel V G S , G ate to S ource V oltage (V ) 10 ID, Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS=24V ID=5A 10 RD S (O N) L im it 10 1s DC 10m 0m s s 11 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 50 60 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V G S , G ate to S ource V oltage (V ) 10 -ID, Drain C urrent (A) 50 8 6 4 2 0 0 V DS=-24V ID=-4A 10 R DS (O N) L im it 10 10 1s DC ms 11 0m s 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 60 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S T M8450 V DD ton V IN D VG S R GE N G 90% 5 toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 10 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve S T M8450 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M8450 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
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