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| S T U/D1255P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -55V F E AT UR E S ( m W ) Max ID -12A R DS (ON) S uper high dense cell design for low R DS (ON). 110 @ V G S = -10V 145 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (TA=25 C unles s otherwis e noted) S ymbol Vspike d VDS VGS Limit 60 -55 20 -12 -10 -23 -15 50 35 -55 to 175 W C Unit V V V A A A A 25 C 70 C ID IDM IS PD TJ, TS TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC 1 JA R 3 50 C /W C /W S T U/D1255P L E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c Condition VGS = 0V, ID = -250uA VDS = -44V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-10A VGS = -4.5V, ID = -6A VDS = -5V, VGS = -10V VDS = -15V, ID = -10A Min Typ C Max Unit -55 -1 100 -1.3 -1.8 -2.5 95 120 30 12 770 80 55 885 94 65 14 10 60 26 16 8 3 3.3 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 110 m-ohm 145 m-ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =-30V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VD = -30V, ID = -1A, VGEN = - 10V, R GE N = 6 ohm VDS =-30V,ID =-5A,VGS =-10V VDS =-30V,ID =-5A,VGS =-4.5V VDS =-30V, ID = -5A, VGS =-10V 12.3 8.8 51.5 23.1 13.7 6.8 2.5 2.8 ns ns ns ns nC nC nC nC S T U/D1255P L E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-15A Min Typ Max Unit -1 -1.3 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max 20 -V G S =10V -V G S =4.5V -V G S =5V 25 25 C 20 -V G S =4V -ID, Drain C urrent(A) -ID, Drain C urrent (A) 16 -55 C 12 15 8 4 0 10 T j=125 C 5 0 -V G S =3V 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1200 1000 2.2 F igure 2. Trans fer C haracteris tics V G S =-10V ID=-10A 800 600 400 200 0 C rs s 0 5 10 15 C is s R DS (ON), On-R es is tance Normalized C os s 20 25 30 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) -50 -25 0 25 50 75 100 125 -V DS , Drain-to S ource Voltage (V ) T J , J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T U/D1255P L B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 V DS =-10V 0 5 10 15 20 25 -Is , S ource-drain current (A) 10 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 60 -ID, Drain C urrent (A) 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) VDS =-30V ID=-5A 10 R DS ( ) ON L im it 10 0m 10 ms s 1 DC 1s 0.1 0.03 VGS =-10V S ingle P ulse T c=25 C 1 10 30 50 0.1 -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T U/D1255P L V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM 0.1 0.05 0.02 0.01 5 on t1 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T U/D1255P L 6 S T U/D1255P L 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S T U/D1255P L TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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